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/* SPDX-License-Identifier: GPL-2.0-only */
#ifndef _SOC_CHIP_H_
#define _SOC_CHIP_H_
#include <stdint.h>
#include <fsp/util.h>
#include <soc/pci_devs.h>
#include <soc/pm.h>
///
/// MRC Flags bits
///
#define MRC_FLAG_ECC_EN BIT0
#define MRC_FLAG_SCRAMBLE_EN BIT1
#define MRC_FLAG_MEMTEST_EN BIT2
/* 0b DDR "fly-by" topology else 1b DDR "tree" topology */
#define MRC_FLAG_TOP_TREE_EN BIT3
/* If set ODR signal is asserted to DRAM devices on writes */
#define MRC_FLAG_WR_ODT_EN BIT4
struct soc_intel_quark_config {
/*
* MemoryInit:
*
* The following fields come from FspUpdVpd.h and are defined as PCDs
* for the FSP binary. Data for these fields comes from the board's
* devicetree.cb file which gets processed into static.c and then
* built into the coreboot image. The fields below contain retain
* the FSP PCD field name.
*/
uint32_t FspReservedMemoryLength; /* FSP reserved memory in bytes */
uint32_t Flags; /* Bitmap of MRC_FLAG_XXX defs above */
uint32_t tRAS; /* ACT to PRE command period in picoseconds */
/* Delay from start of internal write transaction to internal read
* command in picoseconds
*/
uint32_t tWTR;
/* ACT to ACT command period (JESD79 specific to page size 1K/2K) in
* picoseconds
*/
uint32_t tRRD;
/* Four activate window (JESD79 specific to page size 1K/2K) in
* picoseconds
*/
uint32_t tFAW;
uint8_t DramWidth; /* 0=x8, 1=x16, others=RESERVED */
/* 0=DDRFREQ_800, 1=DDRFREQ_1066, others=RESERVED. Only 533MHz SKU
* support 1066 memory
*/
uint8_t DramSpeed;
uint8_t DramType; /* 0=DDR3,1=DDR3L, others=RESERVED */
/* bit[0] RANK0_EN, bit[1] RANK1_EN, others=RESERVED */
uint8_t RankMask;
uint8_t ChanMask; /* bit[0] CHAN0_EN, others=RESERVED */
uint8_t ChanWidth; /* 1=x16, others=RESERVED */
/* 0, 1, 2 (mode 2 forced if ecc enabled), others=RESERVED */
uint8_t AddrMode;
/* 1=1.95us, 2=3.9us, 3=7.8us, others=RESERVED. REFRESH_RATE */
uint8_t SrInt;
uint8_t SrTemp; /* 0=normal, 1=extended, others=RESERVED */
/* 0=34ohm, 1=40ohm, others=RESERVED. RON_VALUE Select MRS1.DIC driver
* impedance control.
*/
uint8_t DramRonVal;
uint8_t DramRttNomVal; /* 0=40ohm, 1=60ohm, 2=120ohm, others=RSVD */
uint8_t DramRttWrVal; /* 0=off others=RESERVED */
/* 0=off, 1=60ohm, 2=120ohm, 3=180ohm, others=RESERVED */
uint8_t SocRdOdtVal;
uint8_t SocWrRonVal; /* 0=27ohm, 1=32ohm, 2=40ohm, others=RESERVED */
uint8_t SocWrSlewRate; /* 0=2.5V/ns, 1=4V/ns, others=RESERVED */
/* 0=512Mb, 1=1Gb, 2=2Gb, 3=4Gb, others=RESERVED */
uint8_t DramDensity;
uint8_t tCL; /* DRAM CAS Latency in clocks */
/* ECC scrub interval in milliseconds 1..255 (0 works as feature
* disable)
*/
uint8_t EccScrubInterval;
/* Number of 32B blocks read for ECC scrub 2..16 */
uint8_t EccScrubBlkSize;
uint8_t SmmTsegSize; /* SMM size in MiB */
};
#endif
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