diff options
Diffstat (limited to 'src/mainboard/gizmosphere/gizmo2/spd')
| -rw-r--r-- | src/mainboard/gizmosphere/gizmo2/spd/Micron_MT41J128M16JT.spd.hex | 219 |
1 files changed, 0 insertions, 219 deletions
diff --git a/src/mainboard/gizmosphere/gizmo2/spd/Micron_MT41J128M16JT.spd.hex b/src/mainboard/gizmosphere/gizmo2/spd/Micron_MT41J128M16JT.spd.hex deleted file mode 100644 index 54b4a607d2..0000000000 --- a/src/mainboard/gizmosphere/gizmo2/spd/Micron_MT41J128M16JT.spd.hex +++ /dev/null @@ -1,219 +0,0 @@ -# SPDX-License-Identifier: GPL-2.0-only - -# Gizmo2 has 1GB using 4 Micron_MT41J128M16JT-125 chips -# The datasheet is available at: -# http://download.micron.com/pdf/datasheets/dram/ddr3/2Gb_DDR3_SDRAM.pdf - -# SPD contents for Gizmo2 2GB DDR3 (1600MHz PC3-12800) soldered down - -# 0 Number of SPD Bytes used / Total SPD Size / CRC Coverage -# bits[3:0]: 1 = 128 SPD Bytes Used -# bits[6:4]: 1 = 256 SPD Bytes Total -# bit7 : 0 = CRC covers bytes 0 ~ 125 -11 - -# 1 SPD Revision - -# 0x10 = Revision 1.0 -10 - -# 2 Key Byte / DRAM Device Type -# bits[7:0]: 0x0b = DDR3 SDRAM -0B - -# 3 Key Byte / Module Type -# bits[3:0]: 3 = SO-DIMM -# bits[7:4]: reserved -03 - -# 4 SDRAM CHIP Density and Banks -# bits[3:0]: 3 = 2 Gigabits Total SDRAM capacity per chip -# bits[6:4]: 0 = 3 (8 banks) -# bit7 : reserved -03 - -# 5 SDRAM Addressing -# bits[2:0]: 1 = 10 Column Address Bits -# bits[5:3]: 2 = 14 Row Address Bits -# bits[7:6]: reserved -11 - -# 6 Module Nominal Voltage, VDD -# bit0 : 0 = 1.5 V operable -# bit1 : 0 = NOT 1.35 V operable -# bit2 : 0 = NOT 1.25 V operable -# bits[7:3]: reserved -00 - -# 7 Module Organization -# bits[2:0]: 2 = 16 bits -# bits[5:3]: 0 = 1 Rank -# bits[7:6]: reserved -02 - -# 8 Module Memory Bus Width -# bits[2:0]: 3 = Primary bus width is 64 bits -# bits[4:3]: 0 = 0 bits (no bus width extension) -# bits[7:5]: reserved -03 - -# 9 Fine Timebase (FTB) Dividend / Divisor -# bits[3:0]: 0x02 divisor -# bits[7:4]: 0x05 dividend -# 5/2 = 2.5ps -52 - -# 10 Medium Timebase (MTB) Dividend -# 11 Medium Timebase (MTB) Divisor -# 1 / 8 = .125 ns - used for clock freq of 400 through 1066 MHz -01 08 - -# 12 SDRAM Minimum Cycle Time (tCKmin) -# 0x0a = tCKmin of 1.25 ns = DDR3-1600 (800 MHz clock) -0A - -# 13 Reserved -00 - -# 14 CAS Latencies Supported, Least Significant Byte -# 15 CAS Latencies Supported, Most Significant Byte -# Cas Latencies of 11 - 5 are supported -FE 00 - -# 16 Minimum CAS Latency Time (tAAmin) -# 0x6E = 13.75ns - DDR3-1600K -6E - -# 17 Minimum Write Recovery Time (tWRmin) -# 0x78 = tWR of 15ns - All DDR3 speed grades -78 - -# 18 Minimum RAS# to CAS# Delay Time (tRCDmin) -# 0x6E = 13.75ns - DDR3-1600K -6E - -# 19 Minimum Row Active to Row Active Delay Time (tRRDmin) -# 0x3C = 7.5ns -3C - -# 20 Minimum Row Precharge Delay Time (tRPmin) -# 0x6E = 13.75ns - DDR3-1600K -6E - -# 21 Upper Nibbles for tRAS and tRC -# bits[3:0]: tRAS most significant nibble = 1 (see byte 22) -# bits[7:4]: tRC most significant nibble = 1 (see byte 23) -11 - -# 22 Minimum Active to Precharge Delay Time (tRASmin), LSB -# 0x118 = 35ns - DDR3-1600 (see byte 21) -18 - -# 23 Minimum Active to Active/Refresh Delay Time (tRCmin), LSB -# 0x186 = 48.75ns - DDR3-1600K -86 - -# 24 Minimum Refresh Recovery Delay Time (tRFCmin), LSB -# 25 Minimum Refresh Recovery Delay Time (tRFCmin), MSB -# 0x500 = 160ns - for 2 Gigabit chips -00 05 - -# 26 Minimum Internal Write to Read Command Delay Time (tWTRmin) -# 0x3c = 7.5 ns - All DDR3 SDRAM speed bins -3C - -# 27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin) -# 0x3c = 7.5ns - All DDR3 SDRAM speed bins -3C - -# 28 Upper Nibble for tFAWmin -# 29 Minimum Four Activate Window Delay Time (tFAWmin) -# 0x0140 = 40ns - DDR3-1600, 2 KB page size -01 40 - -# 30 SDRAM Optional Feature -# bit0 : 1= RZQ/6 supported -# bit1 : 1 = RZQ/7 supported -# bits[6:2]: reserved -# bit7 : 1 = DLL Off mode supported -83 - -# 31 SDRAM Thermal and Refresh Options -# bit0 : 1 = Temp up to 95c supported -# bit1 : 0 = 85-95c uses 2x refresh rate -# bit2 : 1 = Auto Self Refresh supported -# bit3 : 0 = no on die thermal sensor -# bits[6:4]: reserved -# bit7 : 0 = partial self refresh supported -05 - -# 32 Module Thermal Sensor -# 0 = Thermal sensor not incorporated onto this assembly -00 - -# 33 SDRAM Device Type -# bits[1:0]: 0 = Signal Loading not specified -# bits[3:2]: reserved -# bits[6:4]: 0 = Die count not specified -# bit7 : 0 = Standard Monolithic DRAM Device -00 - -# 34 Fine Offset for SDRAM Minimum Cycle Time (tCKmin) -# 35 Fine Offset for Minimum CAS Latency Time (tAAmin) -# 36 Fine Offset for Minimum RAS# to CAS# Delay Time (tRCDmin) -# 37 Fine Offset for Minimum Row Precharge Delay Time (tRPmin) -# 38 Fine Offset for Minimum Active to Active/Refresh Delay (tRCmin) -00 00 00 00 00 - -# 39 - 59 (reserved) -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 - -# 60 Raw Card Extension, Module Nominal Height -# bits[4:0]: 0 = <= 15mm tall -# bits[7:5]: 0 = raw card revision 0-3 -00 - -# 61 Module Maximum Thickness -# bits[3:0]: 0 = thickness front <= 1mm -# bits[7:4]: 0 = thinkness back <= 1mm -00 - -# 62 Reference Raw Card Used -# bits[4:0]: 0 = Reference Raw card A used -# bits[6:5]: 0 = revision 0 -# bit7 : 0 = Reference raw cards A through AL -00 - -# 63 Address Mapping from Edge Connector to DRAM -# bit0 : 0 = standard mapping (not mirrored) -# bits[7:1]: reserved -00 - -# 64 - 116 (reserved) -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 - -# 117 - 118 Module ID: Module Manufacturers JEDEC ID Code -# 0x0001 = AMD -00 01 - -# 119 Module ID: Module Manufacturing Location - oem specified -# 120 Module ID: Module Manufacture Year in BCD -# 0x13 = 2013 -00 13 - -# 121 Module ID: Module Manufacture week -# 0x12 = 12th week -12 - -# 122 - 125: Module Serial Number -53 41 47 45 - -# 126 - 127: Cyclical Redundancy Code -00 00 |