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-rw-r--r--util/blobtool/ddr3_unregistered_spd_128.spec226
-rw-r--r--util/blobtool/ddr3_unregistered_spd_256.spec241
2 files changed, 467 insertions, 0 deletions
diff --git a/util/blobtool/ddr3_unregistered_spd_128.spec b/util/blobtool/ddr3_unregistered_spd_128.spec
new file mode 100644
index 0000000000..3bf027af80
--- /dev/null
+++ b/util/blobtool/ddr3_unregistered_spd_128.spec
@@ -0,0 +1,226 @@
+# Applies to unbuffered DIMM types
+# UDIMM, SO-DIMM, Micro-DIMM, Micro-UDIMM,
+# 72b-SO-UDIMM, 16b-SO-UDIMM, 32b-SO-UDIMM
+
+
+# 4_01_02_11R24.pdf
+#
+# JEDEC Standard No. 21-C
+# Page 4.1.2.11 - 1
+# Annex K: Serial Presence Detect (SPD) for DDR3 SDRAM Modules
+# DDR3 SPD
+# Document Release 6
+# UDIMM Revision 1.3
+# RDIMM Revision 1.3
+# CDIMM Revision 1.3
+# LRDIMM Revision 1.2
+
+{
+ # Byte 0: Number of Bytes Used / Number of Bytes in SPD Device /
+ # CRC Coverage
+ "SPD_Bytes_Used" : 4,
+ "SPD_Bytes_Total" : 3,
+ "CRC_Coverage" : 1,
+
+ # Byte 1: SPD Revision
+ "SPD_Revision" : 8,
+
+ # Byte 2: Key Byte / DRAM Device Type
+ "DRAM_Device_Type" : 8,
+
+ # Byte 3: Key Byte / Module Type
+ "Module_Type" : 4,
+ "Byte_3_reserved" : 4,
+
+ # Byte 4: SDRAM Density and Banks
+ "SDRAM_Capacity" : 4,
+ "Bank_Address_Bits" : 3,
+ "Byte_4_reserved" : 1,
+
+ # Byte 5: SDRAM Addressing
+ "Column_Address_Bits" : 3,
+ "Row_Address_Bits" : 3,
+ "Byte_5_reserved" : 2,
+
+ # Byte 6: Module Nominal Voltage, VDD
+ "NOT_1.5_V_Operable" : 1,
+ "1.35_V_Operable" : 1,
+ "1.25_V_Operable" : 1,
+ "Byte_6_reserved" : 5,
+
+ # Byte 7: Module Organization
+ "SDRAM_Device_Width" : 3,
+ "Number_of_Ranks" : 3,
+ "Byte_7_reserved" : 2,
+
+ # Byte 8: Module Memory Bus Width
+ "Primary_Bus_Width" : 3,
+ "Bus_Width_Extension" : 3,
+ "Byte_8_reserved" : 2,
+
+ # Byte 9: Fine Timebase (FTB) Dividend / Divisor
+ "Fine_Timebase_Divisor" : 4,
+ "Fine_Timebase_Dividend" : 4,
+
+ # Bytes 10 / 11: Medium Timebase (MTB) Dividend / Divisor
+ "Medium_Timebase_Dividend" : 8,
+ "Medium_Timebase_Divisor" : 8,
+
+ # Byte 12: SDRAM Minimum Cycle Time (t CK min)
+ "Minimum_SDRAM_Cycle_Time" : 8,
+
+ # Byte 13: Reserved
+ "Byte_13_Reserved" : 8,
+
+ # Bytes 14 / 15: CAS Latencies Supported
+ "CL_4_Supported" : 1,
+ "CL_5_Supported" : 1,
+ "CL_6_Supported" : 1,
+ "CL_7_Supported" : 1,
+ "CL_8_Supported" : 1,
+ "CL_9_Supported" : 1,
+ "CL_10_Supported" : 1,
+ "CL_11_Supported" : 1,
+
+ "CL_12_Supported" : 1,
+ "CL_13_Supported" : 1,
+ "CL_14_Supported" : 1,
+ "CL_15_Supported" : 1,
+ "CL_16_Supported" : 1,
+ "CL_17_Supported" : 1,
+ "CL_18_Supported" : 1,
+ "Byte_15_Reserved" : 1,
+
+ # Byte 16: Minimum CAS Latency Time (tAAmin)
+ "tAAmin" : 8,
+
+ # Byte 17: Minimum Write Recovery Time (tWRmin)
+ "tWRmin" : 8,
+
+ # Byte 18: Minimum RAS to CAS Delay Time (tRCDmin)
+ "tRCDmin" : 8,
+
+ # Byte 19: Minimum Row Active to Row Active Delay Time (tRRDmin)
+ "tRRDmin" : 8,
+
+ # Byte 20: Minimum Row Precharge Delay Time (tRPmin)
+ "tRPmin" : 8,
+
+ # Bytes 21 - 23: Minimum Active to Precharge Delay Time (tRASmin)
+ # / Minimum Active to Active/Refresh Delay Time
+ # (tRCmin)
+ "tRASmin_Most_Significant Nibble" : 4,
+ "tRCmin_Most_Significant Nibble" : 4,
+ "tRASmin_LSB" : 8,
+ "tRCmin_LSB" : 8,
+
+ # Bytes 24 - 25: Minimum Refresh Recovery Delay Time (tRFCmin)
+ "tRFCmin LSB" : 8,
+ "tRFCmin MSB" : 8,
+
+ # Byte 26: Minimum Internal Write to Read Command Delay Time
+ "tWTRmin" : 8,
+
+ # Byte 27: Minimum Internal Read to Precharge Command Delay Time
+ # (tRTPmin)
+ "tRTPmin" : 8,
+
+ # Byte 28 - 29: Minimum Four Activate Window Delay Time
+ # (tFAWmin)
+ "tFAWmin Most Significant Nibble" : 4,
+ "Byte_28_Reserved" : 4,
+ "tFAWmin Most Significant Byte" : 8,
+
+ # Byte 30: SDRAM Optional Features
+ "RQZ_Div_6_Supported" : 1,
+ "RQZ_Div_7_Supported" : 1,
+ "Byte_30_Reserved" : 5,
+ "DLL_Off_Mode_Supported" : 1,
+
+ # Byte 31: SDRAM Thermal and Refresh
+ # Options
+ "Extended_Temp_range_supported" : 1,
+ "Extended_Temp_Refresh_1x_Refresh" : 1,
+ "Auto_Self_Refresh_Supported" : 1,
+ "On-Die_Thermal_Sensor" : 1,
+ "Byte_31_Reserved" : 3,
+ "Partial_Array_Self_Refresh_Supported" : 1,
+
+ # Byte 32: Module Thermal Sensor
+ "Thermal_Sensor_Accuracy" : 7,
+ "Thermal_Sensor_incorporated" : 1,
+
+ # Byte 33: SDRAM Device Type
+ "Signal_Loading" : 2,
+ "Byte_33_Reserved" : 2,
+ "Die_Count" : 3,
+ "SDRAM_Device_Type" : 1,
+
+ # Byte 34: Fine Offset for SDRAM Minimum
+ # Cycle Time (tCKmin)
+ "tCKmin_Fine_Offset" : 8,
+
+ #Byte 35: Fine Offset for Minimum CAS Latency Time (tAAmin)
+ "tAAmin_Fine_Offset" : 8,
+
+ # Byte 36: Fine Offset for Minimum RAS to CAS Delay Time
+ # (tRCDmin)
+ "tRCDmin_Fine_Offset" : 8,
+
+ #Byte 37: Fine Offset for Minimum Row Precharge Delay Time
+ # (tRPmin)
+ "tRPmin_Fine_Offset" : 8,
+
+ # Byte 38: Fine Offset for Minimum Active to Active/Refresh
+ # Delay Time (tRCmin)
+ "tRCmin_Fine_Offset" : 8,
+
+ # Bytes 39 / 40: Reserved
+ "Byte_39_Reserved" : 8,
+ "Byte_40_Reserved" : 8,
+
+ # Byte 41: SDRAM Maximum Active Count (MAC) Value
+ "Maximum_Activate_Count" : 4,
+ "Maximum_Activate_Window" : 2,
+ "Byte_41_Reserved" : 2,
+
+ # Bytes 42 - 59: Reserved
+ "Reserved_bytes_42_to_59_" [18] : 8,
+
+# Module-Specific Section: Bytes 60 - 116 for Unbuffered DIMMS
+
+ # Byte 60 (Unbuffered): Raw Card Extension, Module Nominal Height
+ "Module_Nominal_Height" : 5,
+ "Raw_Card_Estension" : 3,
+
+ # Byte 61 (Unbuffered): Module Maximum Thickness
+ "Module_Thickness_Front" : 4,
+ "Module_Thickness_Back" : 4,
+
+ # Byte 62 (Unbuffered): Reference Raw Card Used
+ "Reference_Raw_Card" : 5,
+ "Reference_Raw_Card_Revision" : 2,
+ "Reference_Raw_Card_Extension" : 1,
+
+ # Byte 63: Address Mapping from Edge Connector to DRAM
+ "Rank_1_Mapping_Mirrored" : 1,
+ "Byte_63_Reserved" : 7,
+
+ # Bytes 64 -116 (Unbuffered): Reserved
+ "Module_Specific_Byte_Reserved_"[53] : 8,
+
+ # Bytes 117 - 118: Module ID: Module Manufacturers JEDEC ID Code
+ "Module_Manufacturer_JEDEC_ID_Code" : 16,
+
+ # Byte 119: Module ID: Module Manufacturing Location
+ "Module_Manufacturing_Location" : 8,
+
+ # Bytes 120 - 121: Module ID: Module Manufacturing Date
+ "Module_Manufacturing_Date" : 16,
+
+ # Bytes 122 - 125: Module ID: Module Serial Number
+ "Module_Serial_Number" : 32,
+
+ # Bytes 126 - 127: Cyclical Redundancy Code
+ "Module_CRC" : 16
+}
diff --git a/util/blobtool/ddr3_unregistered_spd_256.spec b/util/blobtool/ddr3_unregistered_spd_256.spec
new file mode 100644
index 0000000000..d9cf51e857
--- /dev/null
+++ b/util/blobtool/ddr3_unregistered_spd_256.spec
@@ -0,0 +1,241 @@
+# Applies to unbuffered DIMM types
+# UDIMM, SO-DIMM, Micro-DIMM, Micro-UDIMM,
+# 72b-SO-UDIMM, 16b-SO-UDIMM, 32b-SO-UDIMM
+
+
+# 4_01_02_11R24.pdf
+#
+# JEDEC Standard No. 21-C
+# Page 4.1.2.11 - 1
+# Annex K: Serial Presence Detect (SPD) for DDR3 SDRAM Modules
+# DDR3 SPD
+# Document Release 6
+# UDIMM Revision 1.3
+# RDIMM Revision 1.3
+# CDIMM Revision 1.3
+# LRDIMM Revision 1.2
+
+{
+ # Byte 0: Number of Bytes Used / Number of Bytes in SPD Device /
+ # CRC Coverage
+ "SPD_Bytes_Used" : 4,
+ "SPD_Bytes_Total" : 3,
+ "CRC_Coverage" : 1,
+
+ # Byte 1: SPD Revision
+ "SPD_Revision" : 8,
+
+ # Byte 2: Key Byte / DRAM Device Type
+ "DRAM_Device_Type" : 8,
+
+ # Byte 3: Key Byte / Module Type
+ "Module_Type" : 4,
+ "Byte_3_reserved" : 4,
+
+ # Byte 4: SDRAM Density and Banks
+ "SDRAM_Capacity" : 4,
+ "Bank_Address_Bits" : 3,
+ "Byte_4_reserved" : 1,
+
+ # Byte 5: SDRAM Addressing
+ "Column_Address_Bits" : 3,
+ "Row_Address_Bits" : 3,
+ "Byte_5_reserved" : 2,
+
+ # Byte 6: Module Nominal Voltage, VDD
+ "NOT_1.5_V_Operable" : 1,
+ "1.35_V_Operable" : 1,
+ "1.25_V_Operable" : 1,
+ "Byte_6_reserved" : 5,
+
+ # Byte 7: Module Organization
+ "SDRAM_Device_Width" : 3,
+ "Number_of_Ranks" : 3,
+ "Byte_7_reserved" : 2,
+
+ # Byte 8: Module Memory Bus Width
+ "Primary_Bus_Width" : 3,
+ "Bus_Width_Extension" : 3,
+ "Byte_8_reserved" : 2,
+
+ # Byte 9: Fine Timebase (FTB) Dividend / Divisor
+ "Fine_Timebase_Divisor" : 4,
+ "Fine_Timebase_Dividend" : 4,
+
+ # Bytes 10 / 11: Medium Timebase (MTB) Dividend / Divisor
+ "Medium_Timebase_Dividend" : 8,
+ "Medium_Timebase_Divisor" : 8,
+
+ # Byte 12: SDRAM Minimum Cycle Time (t CK min)
+ "Minimum_SDRAM_Cycle_Time" : 8,
+
+ # Byte 13: Reserved
+ "Byte_13_Reserved" : 8,
+
+ # Bytes 14 / 15: CAS Latencies Supported
+ "CL_4_Supported" : 1,
+ "CL_5_Supported" : 1,
+ "CL_6_Supported" : 1,
+ "CL_7_Supported" : 1,
+ "CL_8_Supported" : 1,
+ "CL_9_Supported" : 1,
+ "CL_10_Supported" : 1,
+ "CL_11_Supported" : 1,
+
+ "CL_12_Supported" : 1,
+ "CL_13_Supported" : 1,
+ "CL_14_Supported" : 1,
+ "CL_15_Supported" : 1,
+ "CL_16_Supported" : 1,
+ "CL_17_Supported" : 1,
+ "CL_18_Supported" : 1,
+ "Byte_15_Reserved" : 1,
+
+ # Byte 16: Minimum CAS Latency Time (tAAmin)
+ "tAAmin" : 8,
+
+ # Byte 17: Minimum Write Recovery Time (tWRmin)
+ "tWRmin" : 8,
+
+ # Byte 18: Minimum RAS to CAS Delay Time (tRCDmin)
+ "tRCDmin" : 8,
+
+ # Byte 19: Minimum Row Active to Row Active Delay Time (tRRDmin)
+ "tRRDmin" : 8,
+
+ # Byte 20: Minimum Row Precharge Delay Time (tRPmin)
+ "tRPmin" : 8,
+
+ # Bytes 21 - 23: Minimum Active to Precharge Delay Time (tRASmin)
+ # / Minimum Active to Active/Refresh Delay Time
+ # (tRCmin)
+ "tRASmin_Most_Significant Nibble" : 4,
+ "tRCmin_Most_Significant Nibble" : 4,
+ "tRASmin_LSB" : 8,
+ "tRCmin_LSB" : 8,
+
+ # Bytes 24 - 25: Minimum Refresh Recovery Delay Time (tRFCmin)
+ "tRFCmin LSB" : 8,
+ "tRFCmin MSB" : 8,
+
+ # Byte 26: Minimum Internal Write to Read Command Delay Time
+ "tWTRmin" : 8,
+
+ # Byte 27: Minimum Internal Read to Precharge Command Delay Time
+ # (tRTPmin)
+ "tRTPmin" : 8,
+
+ # Byte 28 - 29: Minimum Four Activate Window Delay Time
+ # (tFAWmin)
+ "tFAWmin Most Significant Nibble" : 4,
+ "Byte_28_Reserved" : 4,
+ "tFAWmin Most Significant Byte" : 8,
+
+ # Byte 30: SDRAM Optional Features
+ "RQZ_Div_6_Supported" : 1,
+ "RQZ_Div_7_Supported" : 1,
+ "Byte_30_Reserved" : 5,
+ "DLL_Off_Mode_Supported" : 1,
+
+ # Byte 31: SDRAM Thermal and Refresh
+ # Options
+ "Extended_Temp_range_supported" : 1,
+ "Extended_Temp_Refresh_1x_Refresh" : 1,
+ "Auto_Self_Refresh_Supported" : 1,
+ "On-Die_Thermal_Sensor" : 1,
+ "Byte_31_Reserved" : 3,
+ "Partial_Array_Self_Refresh_Supported" : 1,
+
+ # Byte 32: Module Thermal Sensor
+ "Thermal_Sensor_Accuracy" : 7,
+ "Thermal_Sensor_incorporated" : 1,
+
+ # Byte 33: SDRAM Device Type
+ "Signal_Loading" : 2,
+ "Byte_33_Reserved" : 2,
+ "Die_Count" : 3,
+ "SDRAM_Device_Type" : 1,
+
+ # Byte 34: Fine Offset for SDRAM Minimum
+ # Cycle Time (tCKmin)
+ "tCKmin_Fine_Offset" : 8,
+
+ #Byte 35: Fine Offset for Minimum CAS Latency Time (tAAmin)
+ "tAAmin_Fine_Offset" : 8,
+
+ # Byte 36: Fine Offset for Minimum RAS to CAS Delay Time
+ # (tRCDmin)
+ "tRCDmin_Fine_Offset" : 8,
+
+ #Byte 37: Fine Offset for Minimum Row Precharge Delay Time
+ # (tRPmin)
+ "tRPmin_Fine_Offset" : 8,
+
+ # Byte 38: Fine Offset for Minimum Active to Active/Refresh
+ # Delay Time (tRCmin)
+ "tRCmin_Fine_Offset" : 8,
+
+ # Bytes 39 / 40: Reserved
+ "Byte_39_Reserved" : 8,
+ "Byte_40_Reserved" : 8,
+
+ # Byte 41: SDRAM Maximum Active Count (MAC) Value
+ "Maximum_Activate_Count" : 4,
+ "Maximum_Activate_Window" : 2,
+ "Byte_41_Reserved" : 2,
+
+ # Bytes 42 - 59: Reserved
+ "Reserved_bytes_42_to_59_" [18] : 8,
+
+# Module-Specific Section: Bytes 60 - 116 for Unbuffered DIMMS
+
+ # Byte 60 (Unbuffered): Raw Card Extension, Module Nominal Height
+ "Module_Nominal_Height" : 5,
+ "Raw_Card_Estension" : 3,
+
+ # Byte 61 (Unbuffered): Module Maximum Thickness
+ "Module_Thickness_Front" : 4,
+ "Module_Thickness_Back" : 4,
+
+ # Byte 62 (Unbuffered): Reference Raw Card Used
+ "Reference_Raw_Card" : 5,
+ "Reference_Raw_Card_Revision" : 2,
+ "Reference_Raw_Card_Extension" : 1,
+
+ # Byte 63: Address Mapping from Edge Connector to DRAM
+ "Rank_1_Mapping_Mirrored" : 1,
+ "Byte_63_Reserved" : 7,
+
+ # Bytes 64 -116 (Unbuffered): Reserved
+ "Module_Specific_Byte_Reserved_"[53] : 8,
+
+ # Bytes 117 - 118: Module ID: Module Manufacturers JEDEC ID Code
+ "Module_Manufacturer_JEDEC_ID_Code" : 16,
+
+ # Byte 119: Module ID: Module Manufacturing Location
+ "Module_Manufacturing_Location" : 8,
+
+ # Bytes 120 - 121: Module ID: Module Manufacturing Date
+ "Module_Manufacturing_Date" : 16,
+
+ # Bytes 122 - 125: Module ID: Module Serial Number
+ "Module_Serial_Number" : 32,
+
+ # Bytes 126 - 127: Cyclical Redundancy Code
+ "Module_CRC" : 16,
+
+ # Bytes 128 - 145: Module Part Number
+ "Module_Part_Number"[18] : 8,
+
+ # Bytes 146 - 147: Module Revision Code
+ "Module_Revision_Code" : 16,
+
+ # Bytes 148 - 149: DRAM Manufacturers JEDEC ID Code
+ "DRAM_Manufacturer_JEDEC_ID_Code" : 16,
+
+ # Bytes 150 - 175: Manufacturers Specific Data
+ "Manufacturer_Specific_Data_byte_" [26] : 8,
+
+ # Bytes 176 - 255: Open for customer use
+ "Customer_use_byte_" [80] : 8
+}
generated by cgit v1.2.3 (git 2.25.1) at 2024-11-22 17:00:58 +0000