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author | Uwe Poeche <uwe.poeche@siemens.com> | 2019-07-09 14:32:43 +0200 |
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committer | Martin Roth <martinroth@google.com> | 2019-07-23 15:49:09 +0000 |
commit | 868c8074b585e8465c315b0fbcafb940eaec27b7 (patch) | |
tree | ae74ee7616e78891679b9c4988bf224efd7e1386 /util/nvramtool/Makefile | |
parent | 7724cebf978a17f0a2c6117dfebc71d56723d53a (diff) |
sb/intel/common/spi: Increase flash erase timeout
This patch provides an increased timeout (60ms -> 1s) for SPI
HW-sequencing flash erase operations. Without that the erase for MRC
cache writing on siemens/mc_bdx1 sometimes goes wrong because the
timeout stops waiting for flash cycle completion. It was found
during continuous integration. Investigation showed that the used flash
type takes sporadic (e.g. 5% of the test cycles) more time for completion
of erasing operation if the ambient temperature increases. The measured
time values are in range of data sheet of SPI flash. 60ms is a typical
value. So increasing the value is necessary.
tested on siemens/bdx1; measured time values with increased ambient
temperature of flash were always smaller than worst case value of 1s.
Change-Id: Id50636f9ed834ffd7810946798b300e58b2c14d2
Signed-off-by: Uwe Poeche <uwe.poeche@siemens.com>
Reviewed-on: https://review.coreboot.org/c/coreboot/+/34173
Tested-by: build bot (Jenkins) <no-reply@coreboot.org>
Reviewed-by: Werner Zeh <werner.zeh@siemens.com>
Diffstat (limited to 'util/nvramtool/Makefile')
0 files changed, 0 insertions, 0 deletions