diff options
Diffstat (limited to 'src')
| -rw-r--r-- | src/cpu/samsung/exynos5420/dmc.h | 9 | ||||
| -rw-r--r-- | src/cpu/samsung/exynos5420/dmc_init_ddr3.c | 8 | ||||
| -rw-r--r-- | src/cpu/samsung/exynos5420/setup.h | 24 | ||||
| -rw-r--r-- | src/mainboard/google/pit/memory.c | 2 |
4 files changed, 12 insertions, 31 deletions
diff --git a/src/cpu/samsung/exynos5420/dmc.h b/src/cpu/samsung/exynos5420/dmc.h index 89fac429b7..1a6adca6f9 100644 --- a/src/cpu/samsung/exynos5420/dmc.h +++ b/src/cpu/samsung/exynos5420/dmc.h @@ -259,10 +259,11 @@ struct exynos5_tzasc { } __attribute__((packed)); enum ddr_mode { - DDR_MODE_DDR2, - DDR_MODE_DDR3, - DDR_MODE_LPDDR2, - DDR_MODE_LPDDR3, + /* This is in order of ctrl_ddr_mode values. Do not change. */ + DDR_MODE_DDR2 = 0x0, + DDR_MODE_DDR3 = 0x1, + DDR_MODE_LPDDR2 = 0x2, + DDR_MODE_LPDDR3 = 0x3, DDR_MODE_COUNT, }; diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c index 1d7b8a8adb..2dc03b3add 100644 --- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c +++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c @@ -70,12 +70,12 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) /* Specify the DDR memory type as DDR3 */ val = readl(&phy0_ctrl->phy_con0); val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT); - val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT); + val |= (mem->mem_type << PHY_CON0_CTRL_DDR_MODE_SHIFT); writel(val, &phy0_ctrl->phy_con0); val = readl(&phy1_ctrl->phy_con0); val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT); - val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT); + val |= (mem->mem_type << PHY_CON0_CTRL_DDR_MODE_SHIFT); writel(val, &phy1_ctrl->phy_con0); /* Set Read Latency and Burst Length for PHY0 and PHY1 */ @@ -142,8 +142,8 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) clrbits_le32(&drex0->concontrol, DFI_INIT_START); clrbits_le32(&drex1->concontrol, DFI_INIT_START); - update_reset_dll(drex0, DDR_MODE_DDR3); - update_reset_dll(drex1, DDR_MODE_DDR3); + update_reset_dll(drex0, mem->mem_type); + update_reset_dll(drex1, mem->mem_type); /* MEMBASECONFIG0 (CS0) */ writel(mem->membaseconfig0, &tzasc0->membaseconfig0); diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h index 950c2c6f85..63e40a8f0f 100644 --- a/src/cpu/samsung/exynos5420/setup.h +++ b/src/cpu/samsung/exynos5420/setup.h @@ -106,7 +106,6 @@ struct exynos5_phy_control; #define DMC_MEMCONTROL_CLK_STOP_DISABLE (0 << 0) #define DMC_MEMCONTROL_DPWRDN_DISABLE (0 << 1) #define DMC_MEMCONTROL_DPWRDN_ACTIVE_PRECHARGE (0 << 2) -#define DMC_MEMCONTROL_TP_DISABLE (0 << 4) #define DMC_MEMCONTROL_DSREF_DISABLE (0 << 5) #define DMC_MEMCONTROL_DSREF_ENABLE (1 << 5) #define DMC_MEMCONTROL_ADD_LAT_PALL_CYCLE(x) (x << 6) @@ -139,13 +138,6 @@ struct exynos5_phy_control; #define DMC_MEMCONFIGx_CHIP_ROW_16 (4 << 4) #define DMC_MEMCONFIGx_CHIP_BANK_8 (3 << 0) -#define DMC_MEMBASECONFIGx_CHIP_BASE(x) (x << 16) -#define DMC_MEMBASECONFIGx_CHIP_MASK(x) (x << 0) -#define DMC_MEMBASECONFIG_VAL(x) ( \ - DMC_MEMBASECONFIGx_CHIP_BASE(x) | \ - DMC_MEMBASECONFIGx_CHIP_MASK(0x780) \ -) - #define DMC_MEMBASECONFIG0_VAL DMC_MEMBASECONFIG_VAL(0x40) #define DMC_MEMBASECONFIG1_VAL DMC_MEMBASECONFIG_VAL(0x80) @@ -170,8 +162,6 @@ struct exynos5_phy_control; /* COJCONTROL register bit fields */ #define DMC_CONCONTROL_IO_PD_CON_DISABLE (0 << 3) #define DMC_CONCONTROL_AREF_EN_DISABLE (0 << 5) -#define DMC_CONCONTROL_EMPTY_DISABLE (0 << 8) -#define DMC_CONCONTROL_EMPTY_ENABLE (1 << 8) #define DMC_CONCONTROL_RD_FETCH_DISABLE (0x0 << 12) #define DMC_CONCONTROL_TIMEOUT_LEVEL0 (0xFFF << 16) #define DMC_CONCONTROL_DFI_INIT_START_DISABLE (0 << 28) @@ -634,6 +624,8 @@ struct exynos5_phy_control; #define LPDDR3PHY_CTRL_PHY_RESET (1 << 0) #define LPDDR3PHY_CTRL_PHY_RESET_OFF (0 << 0) +/* FIXME(dhendrix): misleading name. The reset value is 0x17021a40, bits 12:11 ++ default to 0x3 which indicates LPDDR3. We want DDR3, so we use 0x1. */ #define PHY_CON0_RESET_VAL 0x17020a40 #define P0_CMD_EN (1 << 14) #define BYTE_RDLVL_EN (1 << 13) @@ -743,7 +735,7 @@ struct exynos5_phy_control; #define CMD_DEFAULT_LPDDR3 0xF #define CMD_DEFUALT_OFFSET 0 #define T_WRDATA_EN 0x7 -#define T_WRDATA_EN_DDR3 0x8 +#define T_WRDATA_EN_DDR3 0x8 /* FIXME(dhendrix): 6 for DDR3? see T_wrdata_en */ #define T_WRDATA_EN_OFFSET 16 #define T_WRDATA_EN_MASK 0x1f @@ -775,20 +767,10 @@ struct exynos5_phy_control; #define DMC_CHIP_MASK_2GB 0x780 #define DMC_CHIP_MASK_4GB 0x700 -#define MEMBASECONFIG_CHIP_MASK_VAL 0x7E0 -#define MEMBASECONFIG_CHIP_MASK_OFFSET 0 -#define MEMBASECONFIG0_CHIP_BASE_VAL 0x20 -#define MEMBASECONFIG1_CHIP_BASE_VAL 0x40 -#define CHIP_BASE_OFFSET 16 - #define MEMCONFIG_VAL 0x1323 #define PRECHCONFIG_DEFAULT_VAL 0xFF000000 #define PWRDNCONFIG_DEFAULT_VAL 0xFFFF00FF -#define TIMINGAREF_VAL 0x5d -#define TIMINGROW_VAL 0x345A8692 -#define TIMINGDATA_VAL 0x3630065C -#define TIMINGPOWER_VAL 0x50380336 #define DFI_INIT_COMPLETE (1 << 3) #define BRBRSVCONTROL_VAL 0x00000033 diff --git a/src/mainboard/google/pit/memory.c b/src/mainboard/google/pit/memory.c index 0c30773bdd..7d8ddcbda6 100644 --- a/src/mainboard/google/pit/memory.c +++ b/src/mainboard/google/pit/memory.c @@ -81,7 +81,6 @@ const struct mem_timings mem_timings = { .memcontrol = DMC_MEMCONTROL_CLK_STOP_DISABLE | DMC_MEMCONTROL_DPWRDN_DISABLE | DMC_MEMCONTROL_DPWRDN_ACTIVE_PRECHARGE | - DMC_MEMCONTROL_TP_DISABLE | DMC_MEMCONTROL_DSREF_DISABLE | DMC_MEMCONTROL_ADD_LAT_PALL_CYCLE(0) | DMC_MEMCONTROL_MEM_TYPE_DDR3 | @@ -107,7 +106,6 @@ const struct mem_timings mem_timings = { .concontrol = DMC_CONCONTROL_DFI_INIT_START_DISABLE | DMC_CONCONTROL_TIMEOUT_LEVEL0 | DMC_CONCONTROL_RD_FETCH_DISABLE | - DMC_CONCONTROL_EMPTY_DISABLE | DMC_CONCONTROL_AREF_EN_DISABLE | DMC_CONCONTROL_IO_PD_CON_DISABLE, .dmc_channels = 1, |