diff options
Diffstat (limited to 'src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mttwl3.c')
-rw-r--r-- | src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mttwl3.c | 742 |
1 files changed, 742 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mttwl3.c b/src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mttwl3.c new file mode 100644 index 0000000000..45884a6c17 --- /dev/null +++ b/src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mttwl3.c @@ -0,0 +1,742 @@ +/* $NoKeywords:$ */ +/** + * @file + * + * mttwl3.c + * + * Technology Phy assisted write levelization for DDR3 + * + * @xrefitem bom "File Content Label" "Release Content" + * @e project: AGESA + * @e sub-project: (Mem/Tech/DDR3) + * @e \$Revision: 63425 $ @e \$Date: 2011-12-22 11:24:10 -0600 (Thu, 22 Dec 2011) $ + * + **/ +/***************************************************************************** +* +* Copyright 2008 - 2012 ADVANCED MICRO DEVICES, INC. All Rights Reserved. +* +* AMD is granting you permission to use this software (the Materials) +* pursuant to the terms and conditions of your Software License Agreement +* with AMD. This header does *NOT* give you permission to use the Materials +* or any rights under AMD's intellectual property. Your use of any portion +* of these Materials shall constitute your acceptance of those terms and +* conditions. If you do not agree to the terms and conditions of the Software +* License Agreement, please do not use any portion of these Materials. +* +* CONFIDENTIALITY: The Materials and all other information, identified as +* confidential and provided to you by AMD shall be kept confidential in +* accordance with the terms and conditions of the Software License Agreement. +* +* LIMITATION OF LIABILITY: THE MATERIALS AND ANY OTHER RELATED INFORMATION +* PROVIDED TO YOU BY AMD ARE PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED +* WARRANTY OF ANY KIND, INCLUDING BUT NOT LIMITED TO WARRANTIES OF +* MERCHANTABILITY, NONINFRINGEMENT, TITLE, FITNESS FOR ANY PARTICULAR PURPOSE, +* OR WARRANTIES ARISING FROM CONDUCT, COURSE OF DEALING, OR USAGE OF TRADE. +* IN NO EVENT SHALL AMD OR ITS LICENSORS BE LIABLE FOR ANY DAMAGES WHATSOEVER +* (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS +* INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF AMD'S NEGLIGENCE, +* GROSS NEGLIGENCE, THE USE OF OR INABILITY TO USE THE MATERIALS OR ANY OTHER +* RELATED INFORMATION PROVIDED TO YOU BY AMD, EVEN IF AMD HAS BEEN ADVISED OF +* THE POSSIBILITY OF SUCH DAMAGES. BECAUSE SOME JURISDICTIONS PROHIBIT THE +* EXCLUSION OR LIMITATION OF LIABILITY FOR CONSEQUENTIAL OR INCIDENTAL DAMAGES, +* THE ABOVE LIMITATION MAY NOT APPLY TO YOU. +* +* AMD does not assume any responsibility for any errors which may appear in +* the Materials or any other related information provided to you by AMD, or +* result from use of the Materials or any related information. +* +* You agree that you will not reverse engineer or decompile the Materials. +* +* NO SUPPORT OBLIGATION: AMD is not obligated to furnish, support, or make any +* further information, software, technical information, know-how, or show-how +* available to you. Additionally, AMD retains the right to modify the +* Materials at any time, without notice, and is not obligated to provide such +* modified Materials to you. +* +* U.S. GOVERNMENT RESTRICTED RIGHTS: The Materials are provided with +* "RESTRICTED RIGHTS." Use, duplication, or disclosure by the Government is +* subject to the restrictions as set forth in FAR 52.227-14 and +* DFAR252.227-7013, et seq., or its successor. Use of the Materials by the +* Government constitutes acknowledgement of AMD's proprietary rights in them. +* +* EXPORT ASSURANCE: You agree and certify that neither the Materials, nor any +* direct product thereof will be exported directly or indirectly, into any +* country prohibited by the United States Export Administration Act and the +* regulations thereunder, without the required authorization from the U.S. +* government nor will be used for any purpose prohibited by the same. +* *************************************************************************** +* +*/ + +/* + *---------------------------------------------------------------------------- + * MODULES USED + * + *---------------------------------------------------------------------------- + */ + + + +#include "AGESA.h" +#include "Ids.h" +#include "mm.h" +#include "mn.h" +#include "mu.h" +#include "mt.h" +#include "mp.h" +#include "mtsdi3.h" +#include "mtlrdimm3.h" +#include "merrhdl.h" +#include "OptionMemory.h" +#include "PlatformMemoryConfiguration.h" +#include "GeneralServices.h" +#include "Filecode.h" +CODE_GROUP (G1_PEICC) +RDATA_GROUP (G1_PEICC) + +#define FILECODE PROC_MEM_TECH_DDR3_MTTWL3_FILECODE +/*---------------------------------------------------------------------------- + * DEFINITIONS AND MACROS + * + *---------------------------------------------------------------------------- + */ +extern MEM_PSC_FLOW_BLOCK* memPlatSpecFlowArray[]; + +/*---------------------------------------------------------------------------- + * TYPEDEFS AND STRUCTURES + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * PROTOTYPES OF LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +BOOLEAN +STATIC +MemTWriteLevelizationHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Pass + ); + +VOID +STATIC +MemTWLPerDimmHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ); + +VOID +STATIC +MemTPrepareDIMMs3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 TargetDIMM, + IN BOOLEAN Wl + ); + +VOID +STATIC +MemTProcConfig3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ); + +VOID +STATIC +MemTBeginWLTrain3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm + ); + +/*---------------------------------------------------------------------------- + * EXPORTED FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function executes first pass of Phy assisted write levelization + * for a specific node (DDR800). + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTWriteLevelizationHw3Pass1 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + return MemTWriteLevelizationHw3 (TechPtr, 1); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function executes second pass of Phy assisted write levelization + * for a specific node (DDR1066 and above). + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTWriteLevelizationHw3Pass2 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + // If current speed is higher than start-up speed, do second pass of WL + if (TechPtr->NBPtr->DCTPtr->Timings.Speed > TechPtr->NBPtr->StartupSpeed) { + return MemTWriteLevelizationHw3 (TechPtr, 2); + } + return TRUE; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function prepares for Phy assisted training. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTPreparePhyAssistedTraining ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + // Disable auto refresh by configuring F2x[1, 0]8C[DisAutoRefresh] = 1. + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFDisAutoRefresh, 1); + // Disable ZQ calibration short command by configuring F2x[1, 0]94[ZqcsInterval] = 00b. + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFZqcsInterval, 0); + // Attempt to get the seeds value from PSC tables for WL and RxEn pass1 training if applicable. + if (!TechPtr->NBPtr->PsPtr->MemPGetPass1Seeds (TechPtr->NBPtr)) { + ASSERT (FALSE); + } + + return (BOOLEAN) (TechPtr->NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function revert to normal settings when exiting from Phy assisted training. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTExitPhyAssistedTraining ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + MEM_NB_BLOCK *NBPtr; + NBPtr = TechPtr->NBPtr; + + // 13.Program F2x[1, 0]8C[DisAutoRefresh] = 0. + NBPtr->BrdcstSet (NBPtr, BFDisAutoRefresh, 0); + // 14.Program F2x[1, 0]94[ZqcsInterval] to the proper interval for the current memory configuration. + NBPtr->BrdcstSet (NBPtr, BFZqcsInterval, 2); + NBPtr->FamilySpecificHook[ExitPhyAssistedTraining] (NBPtr, NBPtr); + + return (BOOLEAN) (NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + +/*---------------------------------------------------------------------------- + * LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function executed hardware based write levelization for a specific die + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Pass - Pass number (1 (400Mhz) or 2 (>400Mhz)) + * + * @pre Auto refresh and ZQCL must be disabled + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +STATIC +MemTWriteLevelizationHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Pass + ) +{ + MEM_NB_BLOCK *NBPtr; + DCT_STRUCT *DCTPtr; + UINT8 Dct; + UINT8 ChipSel; + + NBPtr = TechPtr->NBPtr; + + IDS_HDT_CONSOLE (MEM_STATUS, "\nStart write leveling\n"); + AGESA_TESTPOINT (TpProcMemWriteLevelizationTraining, &(NBPtr->MemPtr->StdHeader)); + // Begin DQS Write timing training + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct); + DCTPtr = NBPtr->DCTPtr; + + TechPtr->WLCriticalDelay = 0x00; + + //training for each Dimm/CS + for (ChipSel = 0; ChipSel < NBPtr->CsPerChannel; ChipSel = ChipSel + NBPtr->CsPerDelay) { + if ((DCTPtr->Timings.CsEnabled & ((UINT16) ((NBPtr->CsPerDelay == 2)? 3 : 1) << ChipSel)) != 0) { + if (!(NBPtr->MCTPtr->Status[SbLrdimms]) || ((NBPtr->ChannelPtr->LrDimmPresent & ((UINT8) 1 << (ChipSel >> 1))) != 0)) { + IDS_HDT_CONSOLE (MEM_STATUS, "\t\tCS %d\n", ChipSel); + MemTWLPerDimmHw3 (TechPtr, (ChipSel / NBPtr->CsPerDelay), Pass); + } + } + } + + NBPtr->FamilySpecificHook[CalcWrDqDqsEarly] (NBPtr, NULL); + } + IDS_HDT_CONSOLE (MEM_FLOW, "End write leveling\n\n"); + return (BOOLEAN) (NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function initializes per DIMM write levelization + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Dimm - DIMM to be trained + * @param[in] Pass - Pass number (1 (400Mhz) or 2 (>400Mhz)) + * + */ + +VOID +STATIC +MemTWLPerDimmHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ) +{ + MEM_DATA_STRUCT *MemPtr; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + MemPtr = NBPtr->MemPtr; + + ASSERT (Dimm < (NBPtr->CsPerChannel / NBPtr->CsPerDelay)); + + // 1. A. Specify the target Dimm that is to be trained by programming + // F2x[1, 0]9C_x08[TrDimmSel]. + NBPtr->SetBitField (NBPtr, BFTrDimmSel, Dimm); + + TechPtr->TargetDIMM = Dimm; + NBPtr->FamilySpecificHook[InitPerNibbleTrn] (NBPtr, NULL); + for (TechPtr->TrnNibble = NIBBLE_0; TechPtr->TrnNibble <= (NBPtr->FamilySpecificHook[TrainWlPerNibble] (NBPtr, &Dimm)? NIBBLE_0 : NIBBLE_1); TechPtr->TrnNibble++) { + // 2. Prepare the DIMMs for write levelization using DDR3-defined + // MR commands. + MemTPrepareDIMMs3 (TechPtr, Dimm, TRUE); + + // 3. After the DIMMs are configured, BIOS waits 40 MEMCLKs to + // satisfy DDR3-defined internal DRAM timing. + NBPtr->WaitXMemClks (NBPtr, 40); + + // 4. Configure the processor's DDR phy for write levelization training: + MemTProcConfig3 (TechPtr, Dimm, Pass); + + // 5. Begin write levelization training + MemTBeginWLTrain3 (TechPtr, Dimm); + } + // 7. Program the target Dimm back to normal operation + MemTPrepareDIMMs3 (TechPtr, Dimm, FALSE); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function prepares the DIMMS for Write Levelization + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] TargetDIMM - DIMM to be trained + * @param[in] Wl - Indicates if WL mode should be enabled + * + */ + +VOID +STATIC +MemTPrepareDIMMs3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 TargetDIMM, + IN BOOLEAN Wl + ) +{ + MEM_NB_BLOCK *NBPtr; + UINT8 ChipSel; + + NBPtr = TechPtr->NBPtr; + + AGESA_TESTPOINT (TpProcMemWlPrepDimms, &(NBPtr->MemPtr->StdHeader)); + ASSERT (TargetDIMM < (NBPtr->CsPerChannel / NBPtr->CsPerDelay)); + TechPtr->TargetDIMM = TargetDIMM; + if (!(TechPtr->TechnologySpecificHook[WlTrainingPrepareLrdimm] (TechPtr, &Wl))) { + for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { + if ((NBPtr->DCTPtr->Timings.CsPresent & ((UINT16)1 << ChipSel)) != 0) { + NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel); + // Set MR1 to F2x7C[MrsAddress], F2x7C[MrsBank]=1 + MemTEMRS13 (TechPtr, Wl, TargetDIMM); + NBPtr->SendMrsCmd (NBPtr); + // Set MR2 to F2x7C[MrsAddress], F2x7C[MrsBank]=1 + MemTEMRS23 (TechPtr); + // Send command + NBPtr->SendMrsCmd (NBPtr); + } + } + if (Wl) { + // Program WrLvOdt for the Target DIMM (or CS) + NBPtr->SetBitField (NBPtr, BFWrLvOdt, NBPtr->ChannelPtr->PhyWLODT[TargetDIMM]); + } + } +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function programs seed values for Write Levelization + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Dimm - DIMM to be trained + * @param[in] Pass - Pass for WL training (1 - 400Mhz or 2 - >400Mhz) + * + */ + +VOID +STATIC +MemTProcConfig3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ) +{ + DIE_STRUCT *MCTPtr; + CH_DEF_STRUCT *ChannelPtr; + MEM_NB_BLOCK *NBPtr; + UINT16 WrDqsDly; + // Memclk Delay incurred by register. + UINT8 MemClkRegDly; + UINT8 ByteLane; + UINT8 DefaultSeed; + UINT8 CurrentSeed; + UINT8 *Seed; + UINT8 RCW2; + UINT16 Speed; + INT16 WrDqsBias; + + NBPtr = TechPtr->NBPtr; + MCTPtr = NBPtr->MCTPtr; + ChannelPtr = TechPtr->NBPtr->ChannelPtr; + + AGESA_TESTPOINT (TpProcMemWlConfigDimms, &(NBPtr->MemPtr->StdHeader)); + RCW2 = ChannelPtr->CtrlWrd02[Dimm]; + Speed = TechPtr->NBPtr->DCTPtr->Timings.Speed; + + IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\t\t Byte: 00 01 02 03 04 05 06 07 ECC\n"); + IDS_HDT_CONSOLE (MEM_FLOW, "\t\t\tSeeds: "); + // Program an initialization Value to registers F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52 to set + // the gross and fine delay for all the byte lane fields. If the target frequency is different than 400MHz, + // BIOS must execute two training passes for each Dimm. For pass 1 at a 400MHz MEMCLK frequency, + // use an initial total delay value. + if (Pass == 1) { + // + // Get the default value of seed + // + if (MCTPtr->Status[SbRegistered]) { + // + // RDIMM + // + if (Speed == DDR667_FREQUENCY) { + DefaultSeed = ((RCW2 & BIT0) == 0) ? 0x3B : 0x4B; + } else { + DefaultSeed = ((RCW2 & BIT0) == 0) ? 0x41 : 0x51; + } + } else if (ChannelPtr->SODimmPresent != 0) { + // + // SODIMMM + // + DefaultSeed = 0x12; + } else if (MCTPtr->Status[SbLrdimms]) { + // + // LRDIMM + // + DefaultSeed = 0xF7; + } else { + // + // UDIMMM + // + DefaultSeed = 0x1A; + } + + NBPtr->FamilySpecificHook[OverrideWLSeed] (NBPtr, &DefaultSeed); + ASSERT (Speed >= DDR667_FREQUENCY); + + // Get platform override seed + Seed = (UINT8 *) FindPSOverrideEntry (NBPtr->RefPtr->PlatformMemoryConfiguration, PSO_WL_SEED, MCTPtr->SocketId, ChannelPtr->ChannelID, Dimm, + &(NBPtr->MCTPtr->LogicalCpuid), &(NBPtr->MemPtr->StdHeader)); + for (ByteLane = 0; ByteLane < TechPtr->DlyTableWidth (); ByteLane++) { + // This includes ECC as byte 8 + CurrentSeed = ((Seed != NULL) ? Seed[ByteLane] : DefaultSeed); + ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + ByteLane] = CurrentSeed; + + if (NBPtr->IsSupported[WLSeedAdjust]) { + if ((CurrentSeed & 0x20) != 0) { + // If (SeedGross is odd) then SeedPreGross = 1 + CurrentSeed = (CurrentSeed & 0x1F) | 0x20; + } else { + // If (SeedGross is even) then SeedPreGross = 2 + CurrentSeed = (CurrentSeed & 0x1F) | 0x40; + } + } + + NBPtr->SetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), CurrentSeed); + IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", CurrentSeed); + } + } else { + //10.Multiply the previously saved delay values in Pass 1, step #5 by (target frequency)/400 to find + //the gross and fine delay initialization values at the target frequency. Use these values as the initial + //seed values when executing Pass 2, step #4. + for (ByteLane = 0; ByteLane < TechPtr->DlyTableWidth (); ByteLane++) { + // This includes ECC as byte 8 + WrDqsDly = ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + ByteLane]; + TechPtr->Bytelane = ByteLane; + NBPtr->FamilySpecificHook[TrainWlPerNibbleSeed] (NBPtr, &WrDqsDly); + + if (MCTPtr->Status[SbRegistered]) { + // + // For Registered Dimms + // + MemClkRegDly = ((RCW2 & BIT0) == 0) ? 0x20 : 0x30; + } else { + // + // Unbuffered Dimms and LRDIMMs + // + MemClkRegDly = 0; + } + // + // Recover any adjustmen to delay for WrDqDqsEarly + // + WrDqsBias = 0; + NBPtr->FamilySpecificHook[AdjustWrDqsBeforeSeedScaling] (NBPtr, &WrDqsBias); + + // Scale WrDqsDly to the next speed + WrDqsDly = (UINT16) (MemClkRegDly + ((((INT32) WrDqsDly - MemClkRegDly - WrDqsBias) * Speed) / TechPtr->PrevSpeed)); + + ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + ByteLane] = (UINT8) WrDqsDly; + + if (NBPtr->IsSupported[WLSeedAdjust]) { + if ((WrDqsDly & 0x20) != 0) { + // If (SeedGross is odd) then SeedPreGross = 1 + WrDqsDly = (WrDqsDly & 0x1F) | 0x20; + } else { + // If (SeedGross is even) then SeedPreGross = 2 + WrDqsDly = (WrDqsDly & 0x1F) | 0x40; + } + } + NBPtr->SetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), WrDqsDly); + IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", WrDqsDly); + } + } + IDS_HDT_CONSOLE (MEM_FLOW, "\n"); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function begins WL training for a specific DIMM + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Dimm - DIMM to be trained + * + */ + +VOID +STATIC +MemTBeginWLTrain3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm + ) +{ + MEM_DATA_STRUCT *MemPtr; + DIE_STRUCT *MCTPtr; + MEM_NB_BLOCK *NBPtr; + UINT8 ByteLane; + UINT8 Seed; + UINT8 Delay; + INT16 Delay16; + + NBPtr = TechPtr->NBPtr; + MemPtr = NBPtr->MemPtr; + MCTPtr = NBPtr->MCTPtr; + + AGESA_TESTPOINT (TpProcMemWlTrainTargetDimm, &(MemPtr->StdHeader)); + // Assert ODT pins for write leveling + NBPtr->SetBitField (NBPtr, BFWrLvOdtEn, 1); + + // Wait 10 MEMCLKs to allow for ODT signal settling. + NBPtr->WaitXMemClks (NBPtr, 10); + + IDS_HDT_CONSOLE (MEM_FLOW, "\t\t\tWrtLvTrEn = 1\n"); + // Program F2x[1, 0]9C_x08[WrtLlTrEn]=1. + NBPtr->SetBitField (NBPtr, BFWrtLvTrEn, 1); + + // Wait 200 MEMCLKs. + NBPtr->WaitXMemClks (NBPtr, 200); + + // Program F2x[1, 0]9C_x08[WrtLlTrEn]=0. + NBPtr->SetBitField (NBPtr, BFWrtLvTrEn, 0); + + // Read from registers F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52 to get the gross and fine Delay settings + // for the target Dimm and save these values. + IDS_HDT_CONSOLE (MEM_FLOW, "\t\t\t PRE: "); + for (ByteLane = 0; ByteLane < (MCTPtr->Status[SbEccDimms] ? 9 : 8); ByteLane++) { + // This includes ECC as byte 8 + Seed = NBPtr->ChannelPtr->WrDqsDlys[(Dimm * TechPtr->DlyTableWidth ()) + ByteLane]; + Delay = (UINT8)NBPtr->GetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane)); + IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", Delay); + + TechPtr->Bytelane = ByteLane; + TechPtr->TargetDIMM = Dimm; + NBPtr->FamilySpecificHook[TrainWlPerNibbleAdjustWLDly] (NBPtr, &Delay); + + if (NBPtr->IsSupported[WLSeedAdjust]) { + // Recover WrDqsGrossDly: + // WrDqsGrossDly = SeedGross + PhRecGrossDlyByte - SeedPreGross + if ((Seed & 0x20) != 0) { + // If (SeedGross is odd) then SeedPreGross = 1 + if ((NBPtr->IsSupported[WLNegativeDelay]) && ((Seed & 0x80) != 0)) { + // If the seed was negative, save the most negative delay in WLCriticalDelay + TechPtr->WLCriticalDelay = MIN (TechPtr->WLCriticalDelay, (INT16)Delay - 0x40); + Delay -= 0x40; + } else { + Delay += (Seed & 0xE0) - 0x20; + } + } else { + // If (SeedGross is even) then SeedPreGross = 2 + if (((Seed & 0xE0) == 0) && (Delay < 0x40)) { + // If SeedGross is 0 and PhRecGrossDlyByte is less than SeedPreGross, + // we have a negative result and need to program the delay to 0 + if (NBPtr->IsSupported[WLNegativeDelay]) { + // + // Save the lowest negative delay value across all Dimms and Bytelanes + // + TechPtr->WLCriticalDelay = MIN (TechPtr->WLCriticalDelay, (INT16)Delay - 0x40); + Delay -= 0x40; + } else { + Delay = 0; + } + } else { + if (NBPtr->GetBitField (NBPtr, BFWrDqDqsEarly) != 0) { + Delay = Delay + (Seed & 0xE0); + Delay16 = Delay - 0x40; + Delay = (UINT8)Delay16; + TechPtr->WLCriticalDelay = MIN (TechPtr->WLCriticalDelay, Delay16); + } else { + Delay += (Seed & 0xE0) - 0x40; + } + } + } + } else if (((Seed >> 5) == 0) && ((Delay >> 5) == 3)) { + IDS_OPTION_HOOK (IDS_CHECK_NEGATIVE_WL, &Delay, &(TechPtr->NBPtr->MemPtr->StdHeader)); + // If seed has gross delay of 0 and PRE has gross delay of 3, + // then round the total delay of TxDqs to 0. + Delay = 0; + } + + if ((!NBPtr->IsSupported[WLNegativeDelay]) && ((Delay > (Seed + 0x20)) || (Seed > (Delay + 0x20)))) { + // + // If PRE comes back with more than Seed +/- 0x20, then this is an + // unexpected condition. Log the condition. + // + PutEventLog (AGESA_ERROR, MEM_ERROR_WL_PRE_OUT_OF_RANGE, NBPtr->Node, NBPtr->Dct, NBPtr->Channel, ((Seed << 8) + Delay), &NBPtr->MemPtr->StdHeader); + } + NBPtr->SetTrainDly (NBPtr, AccessWrDqsDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), Delay); + NBPtr->ChannelPtr->WrDqsDlys[(Dimm * TechPtr->DlyTableWidth ()) + ByteLane] = Delay; + } + + IDS_HDT_CONSOLE_DEBUG_CODE ( + IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\t\tWrDqs: "); + for (ByteLane = 0; ByteLane < (MCTPtr->Status[SbEccDimms] ? 9 : 8); ByteLane++) { + IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", NBPtr->ChannelPtr->WrDqsDlys[(Dimm * TechPtr->DlyTableWidth ()) + ByteLane]); + } + IDS_HDT_CONSOLE (MEM_FLOW, "\n\n"); + ); + + // Disable write leveling ODT pins + NBPtr->SetBitField (NBPtr, BFWrLvOdtEn, 0); + + // Wait 10 MEMCLKs to allow for ODT signal settling. + NBPtr->WaitXMemClks (NBPtr, 10); + +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function programs register after Phy assisted training is finish. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTExitPhyAssistedTrainingClient3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + MEM_NB_BLOCK *NBPtr; + UINT8 Dct; + UINT8 ChipSel; + NBPtr = TechPtr->NBPtr; + + NBPtr->FamilySpecificHook[ReEnablePhyComp] (NBPtr, NBPtr); + NBPtr->BrdcstSet (NBPtr, BFDisDllShutdownSR, 1); + NBPtr->BrdcstSet (NBPtr, BFEnterSelfRef, 1); + NBPtr->PollBitField (NBPtr, BFEnterSelfRef, 0, PCI_ACCESS_TIMEOUT, TRUE); + IDS_HDT_CONSOLE (MEM_FLOW, "\tMemClkAlign = 2\n"); + NBPtr->BrdcstSet (NBPtr, BFExitSelfRef, 1); + NBPtr->PollBitField (NBPtr, BFExitSelfRef, 0, PCI_ACCESS_TIMEOUT, TRUE); + if (NBPtr->IsSupported[SetDllShutDown]) { + NBPtr->BrdcstSet (NBPtr, BFDisDllShutdownSR, 0); + } + + // Calculate Max Latency for both channels to prepare for position training + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct); + NBPtr->SwitchDCT (NBPtr, Dct); + if (TechPtr->FindMaxDlyForMaxRdLat (TechPtr, &ChipSel)) { + NBPtr->SetMaxLatency (NBPtr, TechPtr->MaxDlyForMaxRdLat); + } + } + return (BOOLEAN) (NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} |