diff options
Diffstat (limited to 'src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/Tech/DDR3/mrttwl3.c')
-rw-r--r-- | src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/Tech/DDR3/mrttwl3.c | 368 |
1 files changed, 0 insertions, 368 deletions
diff --git a/src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/Tech/DDR3/mrttwl3.c b/src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/Tech/DDR3/mrttwl3.c deleted file mode 100644 index 0e1fb53e62..0000000000 --- a/src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/Tech/DDR3/mrttwl3.c +++ /dev/null @@ -1,368 +0,0 @@ -/* $NoKeywords:$ */ -/** - * @file - * - * mrttwl3.c - * - * Technology Phy assisted write levelization for recovery DDR3 - * - * @xrefitem bom "File Content Label" "Release Content" - * @e project: AGESA - * @e sub-project: (Proc/Recovery/Mem) - * @e \$Revision: 48803 $ @e \$Date: 2011-03-10 20:18:28 -0700 (Thu, 10 Mar 2011) $ - * - **/ -/* - ***************************************************************************** - * - * Copyright (c) 2011, Advanced Micro Devices, Inc. - * All rights reserved. - * - * Redistribution and use in source and binary forms, with or without - * modification, are permitted provided that the following conditions are met: - * * Redistributions of source code must retain the above copyright - * notice, this list of conditions and the following disclaimer. - * * Redistributions in binary form must reproduce the above copyright - * notice, this list of conditions and the following disclaimer in the - * documentation and/or other materials provided with the distribution. - * * Neither the name of Advanced Micro Devices, Inc. nor the names of - * its contributors may be used to endorse or promote products derived - * from this software without specific prior written permission. - * - * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND - * ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED - * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE - * DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY - * DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES - * (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; - * LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND - * ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT - * (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS - * SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. - * - * *************************************************************************** - * - */ - -/* - *---------------------------------------------------------------------------- - * MODULES USED - * - *---------------------------------------------------------------------------- - */ - - - -#include "AGESA.h" -#include "OptionMemory.h" -#include "PlatformMemoryConfiguration.h" -#include "Ids.h" -#include "mm.h" -#include "mn.h" -#include "mru.h" -#include "mt.h" -#include "mrt3.h" -#include "Filecode.h" -CODE_GROUP (G2_PEI) -RDATA_GROUP (G2_PEI) - -#define FILECODE PROC_RECOVERY_MEM_TECH_DDR3_MRTTWL3_FILECODE -/*---------------------------------------------------------------------------- - * DEFINITIONS AND MACROS - * - *---------------------------------------------------------------------------- - */ -#define MAX_BYTELANES 8 /* Max Bytelanes per channel */ - -/*---------------------------------------------------------------------------- - * TYPEDEFS AND STRUCTURES - * - *---------------------------------------------------------------------------- - */ - -/*---------------------------------------------------------------------------- - * PROTOTYPES OF LOCAL FUNCTIONS - * - *---------------------------------------------------------------------------- - */ - -VOID -STATIC -MemRecTPrepareDIMMs3 ( - IN OUT MEM_TECH_BLOCK *TechPtr, - IN BOOLEAN Wl - ); - -VOID -STATIC -MemRecTProcConfig3 ( - IN OUT MEM_TECH_BLOCK *TechPtr - ); - -VOID -STATIC -MemRecTBeginWLTrain3 ( - IN OUT MEM_TECH_BLOCK *TechPtr - ); - -/*---------------------------------------------------------------------------- - * EXPORTED FUNCTIONS - * - *---------------------------------------------------------------------------- - */ - -/* -----------------------------------------------------------------------------*/ -/** - * - * This function executed hardware based write levelization for a specific die - * - * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK - * - */ - -VOID -MemRecTTrainDQSWriteHw3 ( - IN OUT MEM_TECH_BLOCK *TechPtr - ) -{ - MEM_NB_BLOCK *NBPtr; - - NBPtr = TechPtr->NBPtr; - - IDS_HDT_CONSOLE (MEM_STATUS, "\nStart write leveling\n"); - // Disable auto refresh by configuring F2x[1, 0]8C[DisAutoRefresh] = 1. - NBPtr->SetBitField (NBPtr, BFDisAutoRefresh, 1); - // Disable ZQ calibration short command by configuring F2x[1, 0]94[ZqcsInterval] = 00b. - NBPtr->SetBitField (NBPtr, BFZqcsInterval, 0); - - // 1. Specify the target Dimm that is to be trained by programming - // F2x[1, 0]9C_x08[TrDimmSel]. - IDS_HDT_CONSOLE (MEM_STATUS, "\t\tCS %d\n", NBPtr->DimmToBeUsed << 1); - NBPtr->SetBitField (NBPtr, BFTrDimmSel, NBPtr->DimmToBeUsed); - - // 2. Prepare the DIMMs for write levelization using DDR3-defined - // MR commands. - MemRecTPrepareDIMMs3 (TechPtr, TRUE); - - // 3. After the DIMMs are configured, BIOS waits 40 MEMCLKs to - // satisfy DDR3-defined internal DRAM timing. - MemRecUWait10ns (10, NBPtr->MemPtr); - - // 4. Configure the processor's DDR phy for write levelization training: - MemRecTProcConfig3 (TechPtr); - - // 5. Begin write levelization training - MemRecTBeginWLTrain3 (TechPtr); - - // 6. Configure DRAM Phy Control Register so that the phy stops driving write levelization ODT. - // Program WrLvOdtEn=0 - NBPtr->SetBitField (NBPtr, BFWrLvOdtEn, 0); - - // Wait 10 MEMCLKs to allow for ODT signal settling. - MemRecUWait10ns (3, NBPtr->MemPtr); - - // 7. Program the target Dimm back to normal operation - MemRecTPrepareDIMMs3 (TechPtr, FALSE); - - // 13.Program F2x[1, 0]8C[DisAutoRefresh] = 0. - NBPtr->SetBitField (NBPtr, BFDisAutoRefresh, 0); - // 14.Program F2x[1, 0]94[ZqcsInterval] to the proper interval for the current memory configuration. - NBPtr->SetBitField (NBPtr, BFZqcsInterval, 2); - - IDS_HDT_CONSOLE (MEM_FLOW, "End write leveling\n\n"); -} - -/*---------------------------------------------------------------------------- - * LOCAL FUNCTIONS - * - *---------------------------------------------------------------------------- - */ - -/* -----------------------------------------------------------------------------*/ -/** - * - * This function prepares the DIMMS for Write Levelization - * - * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK - * @param[in] Wl - Indicates if WL mode should be enabled - * - */ - -VOID -STATIC -MemRecTPrepareDIMMs3 ( - IN OUT MEM_TECH_BLOCK *TechPtr, - IN BOOLEAN Wl - ) -{ - UINT8 ChipSel; - MEM_NB_BLOCK *NBPtr; - - NBPtr = TechPtr->NBPtr; - - AGESA_TESTPOINT (TpProcMemWlPrepDimms, &(NBPtr->MemPtr->StdHeader)); - - for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { - // Set Dram ODT based on current mode. - if ((NBPtr->DCTPtr->Timings.CsPresent & (UINT16) 1 << ChipSel) != 0) { - if (Wl) { - NBPtr->SetDramOdtRec (NBPtr, WRITE_LEVELING_MODE, ChipSel, (NBPtr->DimmToBeUsed << 1)); - } else { - NBPtr->SetDramOdtRec (NBPtr, MISSION_MODE, 0, 0); - } - - NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel); - - // Set MR1 to F2x7C[MrsAddress], F2x7C[MrsBank]=1 - MemRecTEMRS13 (TechPtr); - // Program Level - if (Wl) { - if ((ChipSel >> 1) == NBPtr->DimmToBeUsed) { - NBPtr->SetBitField (NBPtr, BFLevel, 1); - if (ChipSel & 1) { - NBPtr->SetBitField (NBPtr, BFMrsQoff, 1); - } - } - } - // Send command - NBPtr->SendMrsCmd (NBPtr); - - // Set MR2 to F2x7C[MrsAddress], F2x7C[MrsBank]=1 - MemRecTEMRS23 (TechPtr); - // Send command - NBPtr->SendMrsCmd (NBPtr); - } - } -} - -/* -----------------------------------------------------------------------------*/ -/** - * - * This function configures the DIMMS for Write Levelization - * - * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK - * - */ - -VOID -STATIC -MemRecTProcConfig3 ( - IN OUT MEM_TECH_BLOCK *TechPtr - ) -{ - MEM_NB_BLOCK *NBPtr; - CH_DEF_STRUCT *ChannelPtr; - UINT8 ByteLane; - UINT8 *Seed; - UINT8 DefaultSeed; - UINT8 CurrentSeed; - UINT8 Dimm; - - NBPtr = TechPtr->NBPtr; - ChannelPtr = TechPtr->NBPtr->ChannelPtr; - - Dimm = NBPtr->DimmToBeUsed; - - // Program WrLvOdtEn=1 - NBPtr->SetBitField (NBPtr, BFWrLvOdtEn, 1); - - // Wait 10 MEMCLKs to allow for ODT signal settling. - MemRecUWait10ns (3, NBPtr->MemPtr); - - IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\t\t Byte: 00 01 02 03 04 05 06 07 ECC\n"); - IDS_HDT_CONSOLE (MEM_FLOW, "\t\t\tSeeds: "); - // Program an initialization Value to registers F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52 to set - // the gross and fine delay for all the byte lane fields. If the target frequency is different than 400MHz, - // BIOS must execute two training passes for each Dimm. For pass 1 at a 400MHz MEMCLK frequency, - // use an initial total delay Value of 01Fh. This represents a 1UI (UI=.5MEMCLK) delay and is determined - // by design. - - // Get default seed - if (ChannelPtr->RegDimmPresent != 0) { - DefaultSeed = 0x41; - } else if (ChannelPtr->SODimmPresent != 0) { - DefaultSeed = 0x12; - } else { - DefaultSeed = 0x1A; - } - - // Get platform override seed - Seed = (UINT8 *) MemRecFindPSOverrideEntry (NBPtr->RefPtr->PlatformMemoryConfiguration, PSO_WL_SEED, NBPtr->MCTPtr->SocketId, ChannelPtr->ChannelID); - - IDS_HDT_CONSOLE (MEM_FLOW, "Seeds: "); - for (ByteLane = 0; ByteLane < 8; ByteLane++) { - // This includes ECC as byte 8 - CurrentSeed = ((Seed != NULL) ? Seed[ByteLane] : DefaultSeed); - NBPtr->SetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), CurrentSeed); - ChannelPtr->WrDqsDlys[Dimm * MAX_BYTELANES + ByteLane] = CurrentSeed; - IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", CurrentSeed); - } - IDS_HDT_CONSOLE (MEM_FLOW, "\n"); - - // Program F2x[1, 0]9C_x08[WrtLvTrMode]=0 for phy assisted training. - - // Program F2x[1, 0]9C_x08[TrNibbleSel]=0 - - IDS_HDT_CONSOLE (MEM_FLOW, "\n"); -} - -/* -----------------------------------------------------------------------------*/ -/** - * - * This function begins WL training for a specific DIMM - * - * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK - * - */ - -VOID -STATIC -MemRecTBeginWLTrain3 ( - IN OUT MEM_TECH_BLOCK *TechPtr - ) -{ - MEM_NB_BLOCK *NBPtr; - UINT8 ByteLane; - UINT8 Seed; - UINT8 Delay; - UINT8 Dimm; - - NBPtr = TechPtr->NBPtr; - - Dimm = NBPtr->DimmToBeUsed; - IDS_HDT_CONSOLE (MEM_FLOW, "\t\t\tWrtLvTrEn = 1\n"); - // Program F2x[1, 0]9C_x08[WrtLlTrEn]=1. - NBPtr->SetBitField (NBPtr, BFWrtLvTrEn, 1); - - // Wait 200 MEMCLKs. If executing pass 2, wait 32 MEMCLKs. - MemRecUWait10ns (50, NBPtr->MemPtr); - - // Program F2x[1, 0]9C_x08[WrtLlTrEn]=0. - NBPtr->SetBitField (NBPtr, BFWrtLvTrEn, 0); - - // Read from registers F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52 to get the gross and fine Delay settings - // for the target Dimm and save these values. - IDS_HDT_CONSOLE (MEM_FLOW, " PRE WrDqs\n"); - for (ByteLane = 0; ByteLane < 8; ByteLane++) { - // This includes ECC as byte 8 - Seed = NBPtr->ChannelPtr->WrDqsDlys[(Dimm * MAX_BYTELANES) + ByteLane]; - Delay = (UINT8)NBPtr->GetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane)); - IDS_HDT_CONSOLE (MEM_FLOW, " %02x ", Delay); - if (((Seed >> 5) == 0) && ((Delay >> 5) == 3)) { - // If seed has gross delay of 0 and PRE has gross delay of 3, - // then round the total delay of TxDqs to 0. - Delay = 0; - } - NBPtr->SetTrainDly (NBPtr, AccessWrDqsDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), Delay); - NBPtr->ChannelPtr->WrDqsDlys[(Dimm * MAX_BYTELANES) + ByteLane] = Delay; - IDS_HDT_CONSOLE (MEM_FLOW, " %02x\n", Delay); - } - - IDS_HDT_CONSOLE_DEBUG_CODE ( - IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\t\tWrDqs: "); - for (ByteLane = 0; ByteLane < 8; ByteLane++) { - IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", NBPtr->ChannelPtr->WrDqsDlys[ByteLane]); - } - IDS_HDT_CONSOLE (MEM_FLOW, "\n\n"); - ); -} |