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diff --git a/src/vendorcode/amd/agesa/f12/Proc/Mem/Tech/DDR3/mtsdi3.c b/src/vendorcode/amd/agesa/f12/Proc/Mem/Tech/DDR3/mtsdi3.c
deleted file mode 100644
index ea86205229..0000000000
--- a/src/vendorcode/amd/agesa/f12/Proc/Mem/Tech/DDR3/mtsdi3.c
+++ /dev/null
@@ -1,503 +0,0 @@
-/* $NoKeywords:$ */
-/**
- * @file
- *
- * mtsdi3.c
- *
- * Technology Software DRAM Init for DDR3
- *
- * @xrefitem bom "File Content Label" "Release Content"
- * @e project: AGESA
- * @e sub-project: (Mem/Tech/DDR3)
- * @e \$Revision: 49104 $ @e \$Date: 2011-03-17 06:54:25 +0800 (Thu, 17 Mar 2011) $
- *
- **/
-/*****************************************************************************
-*
-* Copyright (c) 2011, Advanced Micro Devices, Inc.
- * All rights reserved.
- *
- * Redistribution and use in source and binary forms, with or without
- * modification, are permitted provided that the following conditions are met:
- * * Redistributions of source code must retain the above copyright
- * notice, this list of conditions and the following disclaimer.
- * * Redistributions in binary form must reproduce the above copyright
- * notice, this list of conditions and the following disclaimer in the
- * documentation and/or other materials provided with the distribution.
- * * Neither the name of Advanced Micro Devices, Inc. nor the names of
- * its contributors may be used to endorse or promote products derived
- * from this software without specific prior written permission.
- *
- * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND
- * ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
- * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
- * DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY
- * DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES
- * (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES;
- * LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND
- * ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT
- * (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS
- * SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
-* ***************************************************************************
-*
-*/
-
-
-/*
- *----------------------------------------------------------------------------
- * MODULES USED
- *
- *----------------------------------------------------------------------------
- */
-
-
-
-#include "AGESA.h"
-#include "Ids.h"
-#include "mm.h"
-#include "mn.h"
-#include "mu.h"
-#include "mt.h"
-#include "mt3.h"
-#include "mtsdi3.h"
-#include "mtrci3.h"
-#include "merrhdl.h"
-#include "Filecode.h"
-CODE_GROUP (G1_PEICC)
-RDATA_GROUP (G1_PEICC)
-#define FILECODE PROC_MEM_TECH_DDR3_MTSDI3_FILECODE
-/*----------------------------------------------------------------------------
- * DEFINITIONS AND MACROS
- *
- *----------------------------------------------------------------------------
- */
-
-/*----------------------------------------------------------------------------
- * TYPEDEFS AND STRUCTURES
- *
- *----------------------------------------------------------------------------
- */
-
-/*----------------------------------------------------------------------------
- * PROTOTYPES OF LOCAL FUNCTIONS
- *
- *----------------------------------------------------------------------------
- */
-
-/*----------------------------------------------------------------------------
- * EXPORTED FUNCTIONS
- *
- *----------------------------------------------------------------------------
- */
-
-
-
-/* -----------------------------------------------------------------------------*/
-/**
- *
- * This function initiates software DRAM init for both DCTs
- * at the same time.
- *
- * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
- *
- */
-
-BOOLEAN
-MemTDramInitSw3 (
- IN OUT MEM_TECH_BLOCK *TechPtr
- )
-{
- UINT8 Dct;
- UINT8 ChipSel;
- UINT32 Dummy;
-
- MEM_DATA_STRUCT *MemPtr;
- DIE_STRUCT *MCTPtr;
- MEM_NB_BLOCK *NBPtr;
-
- NBPtr = TechPtr->NBPtr;
- MemPtr = NBPtr->MemPtr;
- MCTPtr = NBPtr->MCTPtr;
-
- IDS_HDT_CONSOLE (MEM_STATUS, "\nStart Dram Init\n");
- // 3.Program F2x[1,0]7C[EnDramInit]=1
- IDS_HDT_CONSOLE (MEM_FLOW, "\tEnDramInit = 1 for both DCTs\n");
- NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 1);
- NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE);
-
- // 4.wait 200us
- MemUWait10ns (20000, MemPtr);
-
- // 5.Program F2x[1, 0]7C[DeassertMemRstX] = 1.
- NBPtr->BrdcstSet (NBPtr, BFDeassertMemRstX, 1);
-
- // 6.wait 500us
- MemUWait10ns (50000, MemPtr);
-
- // Do Phy Fence training before sending MRS commands
- if (!NBPtr->IsSupported[FenceTrnBeforeDramInit]) {
- AGESA_TESTPOINT (TpProcMemPhyFenceTraining, &(NBPtr->MemPtr->StdHeader));
- for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
- NBPtr->SwitchDCT (NBPtr, Dct);
- if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
- IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
- NBPtr->PhyFenceTraining (NBPtr);
- }
- }
- }
-
- // 7.NOP or deselect & take CKE high
- NBPtr->BrdcstSet (NBPtr, BFAssertCke, 1);
-
- // 8.wait 360ns
- MemUWait10ns (36, MemPtr);
-
- // The following steps are performed once for each channel with unbuffered DIMMs
- // and once for each chip select on registered DIMMs:
- for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
- NBPtr->SwitchDCT (NBPtr, Dct);
- if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
- IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
-
- // Enable Dram Parity if appropriate.
- NBPtr->FamilySpecificHook[EnableParityAfterMemRst] (NBPtr, NULL);
-
- // The following steps are performed with registered DIMMs only and
- // must be done for each chip select pair:
- if (MCTPtr->Status[SbRegistered]) {
- MemTDramControlRegInit3 (TechPtr);
- }
-
- // Initialize LRDIMM's register
- TechPtr->TechnologySpecificHook[LrdimmControlRegInit] (TechPtr, NULL);
-
- for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) {
- if (NBPtr->GetSysAddr (NBPtr, ChipSel, &Dummy)) {
- IDS_HDT_CONSOLE (MEM_STATUS, "\t\tCS %d\n", ChipSel);
- // if chip select present
- if (!(TechPtr->TechnologySpecificHook[LrdimmSendAllMRCmds] (TechPtr, &ChipSel))) {
- MemTSendAllMRCmds3 (TechPtr, ChipSel);
- }
- // NOTE: wait 512 clocks for DLL-relock
- MemUWait10ns (50000, NBPtr->MemPtr); // wait 500us
- if (!(MCTPtr->Status[SbRegistered] || MCTPtr->Status[SbLrdimms])) {
- break;
- }
- }
- }
-
- // 17.Send two ZQCL commands (to even then odd chip select)
- NBPtr->sendZQCmd (NBPtr);
- NBPtr->sendZQCmd (NBPtr);
- }
- }
-
- // 18.Program F2x[1,0]7C[EnDramInit]=0
- NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 0);
- NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE);
- //
- // For Unbuffered Dimms, Issue MRS for remaining CS without EnDramInit
- //
- NBPtr->FamilySpecificHook[SendMrsCmdsPerCs] (NBPtr, NBPtr);
-
- IDS_HDT_CONSOLE (MEM_FLOW, "End Dram Init\n\n");
- return (BOOLEAN) (MCTPtr->ErrCode < AGESA_FATAL);
-}
-
-/* -----------------------------------------------------------------------------*/
-/**
- *
- * This function calculates the EMRS1 value
- *
- * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
- * @param[in] Wl - Indicates if WL mode should be enabled
- * @param[in] TargetDIMM - DIMM target for WL
- */
-
-VOID
-MemTEMRS13 (
- IN OUT MEM_TECH_BLOCK *TechPtr,
- IN BOOLEAN Wl,
- IN UINT8 TargetDIMM
- )
-{
- UINT16 MrsAddress;
- UINT8 MaxDimmPerCH;
- UINT8 ChipSel;
- UINT8 Value8;
-
- MEM_NB_BLOCK *NBPtr;
-
- NBPtr = TechPtr->NBPtr;
- MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration,
- NBPtr->MCTPtr->SocketId,
- NBPtr->ChannelPtr->ChannelID);
- ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel));
-
- // BA2=0,BA1=0,BA0=1
- NBPtr->SetBitField (NBPtr, BFMrsBank, 1);
-
- MrsAddress = 0;
-
- // program MrsAddress[5,1]=output driver impedance control (DIC):
- // based on F2x[1,0]84[DrvImpCtrl]
- if (!(NBPtr->IsSupported[CheckDrvImpCtrl])) {
- Value8 = (UINT8)NBPtr->GetBitField (NBPtr, BFDrvImpCtrl);
- if ((Value8 & ((UINT8) 1 << 1)) != 0) {
- MrsAddress |= ((UINT16) 1 << 5);
- }
- if ((Value8 & ((UINT8) 1 << 0)) != 0) {
- MrsAddress |= ((UINT16) 1 << 1);
- }
- } else {
- MrsAddress |= ((UINT16) 1 << 1);
- }
- // program MrsAddress[9,6,2]=nominal termination resistance of ODT (RTT):
- // Different CS may have different RTT.
- //
- Value8 = NBPtr->MemNGetDramTerm (NBPtr, ChipSel);
-
- //
- // If Write Leveling this DIMM
- //
- if (Wl) {
- if ((ChipSel >> 1) == TargetDIMM) {
- // Program MrsAddress[7] = 1 for Write leveling enable
- MrsAddress |= ((UINT16) 1 << 7);
- if (ChipSel & 1) {
- // Output buffer disabled, MrsAddress[7] (Qoff = 1)
- MrsAddress |= ((UINT16) 1 << 12);
- }
- // Set Rtt_Nom = Rtt_Wr if there are 2 or more dimms
- if ((NBPtr->ChannelPtr->DimmQrPresent != 0) || (NBPtr->ChannelPtr->Dimms >= 2)) {
- Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
- } else if (NBPtr->IsSupported[WlRttNomFor1of3Cfg] && (MaxDimmPerCH == 3)) {
- // For some family, set Rtt_Nom = Rtt_Wr in one of three DIMMs per channel configurations
- Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
- }
- }
- }
- //
- // Turn off Rtt_Nom (DramTerm=0) for certain CS in certain configs.
- //
- // All odd CS for 4 Dimm Systems
- if (MaxDimmPerCH == 4) {
- if (ChipSel & 0x01) {
- Value8 = 0;
- }
- // CS 1 and 5 for 3 Dimm configs
- } else if (MaxDimmPerCH == 3) {
- if ((ChipSel == 1) || (ChipSel == 5)) {
- Value8 = 0;
- }
- }
- // All odd CS of any QR Dimms
- if ((NBPtr->ChannelPtr->DimmQrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) {
- if (ChipSel & 0x01) {
- Value8 = 0;
- }
- }
- if ((Value8 & ((UINT8) 1 << 2)) != 0) {
- MrsAddress |= ((UINT16) 1 << 9);
- }
- if ((Value8 & ((UINT8) 1 << 1)) != 0) {
- MrsAddress |= ((UINT16) 1 << 6);
- }
- if ((Value8 & ((UINT8) 1 << 0)) != 0) {
- MrsAddress |= ((UINT16) 1 << 2);
- }
-
- // program MrsAddress[12]=output disable (QOFF):
- // based on F2x[1,0]84[Qoff]
-
- if (!NBPtr->IsSupported[CheckQoff]) {
- if (NBPtr->GetBitField (NBPtr, BFQoff) != 0) {
- MrsAddress |= ((UINT16) 1 << 12);
- }
- }
-
- // program MrsAddress[11]=TDQS:
- // based on F2x[1,0]94[RDqsEn]
-
- if ((NBPtr->DCTPtr->Timings.Dimmx4Present != 0) && (NBPtr->DCTPtr->Timings.Dimmx8Present != 0)) {
- if (!(NBPtr->IsSupported[SetTDqsForx8DimmOnly]) || ((NBPtr->DCTPtr->Timings.Dimmx8Present & ((UINT8) 1 << (ChipSel >> 1))) != 0)) {
- MrsAddress |= ((UINT16) 1 << 11);
- }
- }
-
- NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
-}
-
-/* -----------------------------------------------------------------------------*/
-/**
- *
- * This function calculates the EMRS2 value
- *
- * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
- *
- */
-
-VOID
-MemTEMRS23 (
- IN OUT MEM_TECH_BLOCK *TechPtr
- )
-{
- UINT32 MrsAddress;
- UINT8 DramTermDyn;
- UINT8 MaxDimmPerCH;
- UINT8 ChipSel;
- MEM_NB_BLOCK *NBPtr;
-
- NBPtr = TechPtr->NBPtr;
-
- MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, NBPtr->MCTPtr->SocketId, NBPtr->ChannelPtr->ChannelID );
- ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel));
-
- // BA2=0,BA1=1,BA0=0
- NBPtr->SetBitField (NBPtr, BFMrsBank, 2);
-
- // program MrsAddress[5:3]=CAS write latency (CWL):
- MrsAddress = NBPtr->MemNGetMR2CWL (NBPtr);
-
- // program MrsAddress[6]=auto self refresh method (ASR):
- // program MrsAddress[7]=self refresh temperature range (SRT):
- MrsAddress |= 1 << 6;
- MrsAddress &= ( ~ (1 << 7));
-
- // program MrsAddress[10:9]=dynamic termination during writes (RTT_WR):
- DramTermDyn = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
- // Special Case for 1 DR Unbuffered Dimm in 3 Dimm/Ch
- if (!(NBPtr->MCTPtr->Status[SbRegistered])) {
- if (MaxDimmPerCH == 3) {
- if (NBPtr->ChannelPtr->Dimms == 1) {
- if ((NBPtr->ChannelPtr->DimmDrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) {
- DramTermDyn = 1;
- }
- }
- }
- }
- MrsAddress |= (UINT16) DramTermDyn << 9;
-
- NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
-}
-
-/* -----------------------------------------------------------------------------*/
-/**
- *
- * This function calculates the EMRS3 value
- *
- * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
- *
- */
-
-VOID
-MemTEMRS33 (
- IN OUT MEM_TECH_BLOCK *TechPtr
- )
-{
- MEM_NB_BLOCK *NBPtr;
-
- NBPtr = TechPtr->NBPtr;
-
- // BA2=0,BA1=1,BA0=1
- NBPtr->SetBitField (NBPtr, BFMrsBank, 3);
-
- // program MrsAddress[1:0]=multi purpose register address location
- // (MPR Location):based on F2x[1,0]84[MprLoc]
- // program MrsAddress[2]=multi purpose register
- // (MPR):based on F2x[1,0]84[MprEn]
- NBPtr->SetBitField (NBPtr, BFMrsAddress, (NBPtr->GetBitField (NBPtr, BFDramMRSReg) >> 24) & 0x0007);
-}
-
-/* -----------------------------------------------------------------------------*/
-/**
- *
- * This sets MRS value
- *
- * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
- *
- */
-
-VOID
-MemTMRS3 (
- IN OUT MEM_TECH_BLOCK *TechPtr
- )
-{
- UINT32 MrsAddress;
- MEM_NB_BLOCK *NBPtr;
- UINT32 Ppd;
-
- NBPtr = TechPtr->NBPtr;
-
- // BA2=0,BA1=0,BA0=0
- NBPtr->SetBitField (NBPtr, BFMrsBank, 0);
-
- // program MrsAddress[1:0]=burst length and control method
- // (BL):based on F2x[1,0]84[BurstCtrl]
- MrsAddress = NBPtr->GetBitField (NBPtr, BFBurstCtrl);
-
- // program MrsAddress[3]=1 (BT):interleaved
- MrsAddress |= (UINT16) 1 << 3;
-
- // program MrsAddress[6:4,2]=read CAS latency
- MrsAddress |= NBPtr->MemNGetMR0CL (NBPtr);
-
- // program MrsAddress[11:9]=write recovery for auto-precharge
- MrsAddress |= NBPtr->MemNGetMR0WR (NBPtr);
-
- // program MrsAddress[12] (PPD):based on F2x[1,0]84[PChgPDModeSel]
- Ppd = NBPtr->GetBitField (NBPtr, BFPchgPDModeSel);
- NBPtr->FamilySpecificHook[MR0_PPD] (NBPtr, &Ppd);
- IDS_OPTION_HOOK (IDS_MEM_MR0, &Ppd, &TechPtr->NBPtr->MemPtr->StdHeader);
- MrsAddress |= Ppd << 12;
-
- // program MrsAddress[8]=1 (DLL):DLL reset
- MrsAddress |= (UINT32) 1 << 8;
-
- // During memory initialization, the value sent to MR0 is saved for S3 resume
- NBPtr->MemNSaveMR0 (NBPtr, MrsAddress);
-
- NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
-}
-
-/* -----------------------------------------------------------------------------*/
-/**
- *
- * This send all MR commands to a rank in sequence 2-3-1-0
- *
- * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
- * @param[in] ChipSel - Target Chip Select
- */
-
-VOID
-MemTSendAllMRCmds3 (
- IN OUT MEM_TECH_BLOCK *TechPtr,
- IN UINT8 ChipSel
- )
-{
- MEM_NB_BLOCK *NBPtr;
-
- NBPtr = TechPtr->NBPtr;
-
- NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel);
-
- // 13.Send EMRS(2)
- MemTEMRS23 (TechPtr);
- AGESA_TESTPOINT (TpProcMemSendMRS2, &(NBPtr->MemPtr->StdHeader));
- NBPtr->SendMrsCmd (NBPtr);
-
- // 14.Send EMRS(3). Ordinarily at this time, MrsAddress[2:0]=000b
- MemTEMRS33 (TechPtr);
- AGESA_TESTPOINT (TpProcMemSendMRS3, &(NBPtr->MemPtr->StdHeader));
- NBPtr->SendMrsCmd (NBPtr);
-
- // 15.Send EMRS(1).
- MemTEMRS13 (TechPtr, FALSE, (ChipSel >> 1));
- AGESA_TESTPOINT (TpProcMemSendMRS1, &(NBPtr->MemPtr->StdHeader));
- NBPtr->SendMrsCmd (NBPtr);
-
- // 16.Send MRS with MrsAddress[8]=1(reset the DLL)
- MemTMRS3 (TechPtr);
- AGESA_TESTPOINT (TpProcMemSendMRS0, &(NBPtr->MemPtr->StdHeader));
- NBPtr->SendMrsCmd (NBPtr);
-}
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