diff options
Diffstat (limited to 'src/vendorcode/amd/agesa/f10/Proc/Recovery/Mem/NB/HY/mrndcthy.c')
-rwxr-xr-x | src/vendorcode/amd/agesa/f10/Proc/Recovery/Mem/NB/HY/mrndcthy.c | 152 |
1 files changed, 152 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/f10/Proc/Recovery/Mem/NB/HY/mrndcthy.c b/src/vendorcode/amd/agesa/f10/Proc/Recovery/Mem/NB/HY/mrndcthy.c new file mode 100755 index 0000000000..97ad7b37c8 --- /dev/null +++ b/src/vendorcode/amd/agesa/f10/Proc/Recovery/Mem/NB/HY/mrndcthy.c @@ -0,0 +1,152 @@ +/** + * @file + * + * mrndctHy.c + * + * Northbridge DCT support for Hydra Recovery + * + * @xrefitem bom "File Content Label" "Release Content" + * @e project: AGESA + * @e sub-project: (Proc/Recovery/Mem) + * @e \$Revision: 44323 $ @e \$Date: 2010-12-22 01:24:58 -0700 (Wed, 22 Dec 2010) $ + * + **/ +/***************************************************************************** +* +* Copyright (c) 2011, Advanced Micro Devices, Inc. +* All rights reserved. +* +* Redistribution and use in source and binary forms, with or without +* modification, are permitted provided that the following conditions are met: +* * Redistributions of source code must retain the above copyright +* notice, this list of conditions and the following disclaimer. +* * Redistributions in binary form must reproduce the above copyright +* notice, this list of conditions and the following disclaimer in the +* documentation and/or other materials provided with the distribution. +* * Neither the name of Advanced Micro Devices, Inc. nor the names of +* its contributors may be used to endorse or promote products derived +* from this software without specific prior written permission. +* +* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND +* ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED +* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE +* DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY +* DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES +* (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; +* LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND +* ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT +* (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS +* SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. +* +* *************************************************************************** +* +*/ + + +/* + *---------------------------------------------------------------------------- + * MODULES USED + * + *---------------------------------------------------------------------------- + */ + + + +#include "AGESA.h" +#include "OptionMemory.h" +#include "PlatformMemoryConfiguration.h" +#include "Ids.h" +#include "mm.h" +#include "mn.h" +#include "mt.h" +#include "mru.h" +#include "mrnhy.h" +#include "Filecode.h" +#define FILECODE PROC_RECOVERY_MEM_NB_HY_MRNDCTHY_FILECODE + +/*---------------------------------------------------------------------------- + * EXPORTED FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +/* -----------------------------------------------------------------------------*/ +/** + * + * Set Dram ODT for mission mode and write leveling mode. + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * @param[in] OdtMode - Mission mode or write leveling mode + * @param[in] ChipSelect - Chip select number + * @param[in] TargetCS - Chip select number that is being trained + * + */ + +VOID +MemRecNSetDramOdtHy ( + IN OUT MEM_NB_BLOCK *NBPtr, + IN ODT_MODE OdtMode, + IN UINT8 ChipSelect, + IN UINT8 TargetCS + ) +{ + UINT8 Dimms; + UINT8 *DimmsPerChPtr; + UINT8 MaxDimmsPerChannel; + UINT8 DramTerm; + UINT8 DramTermDyn; + UINT8 WrLvOdt; + BOOLEAN IsDualRank; + + Dimms = NBPtr->ChannelPtr->Dimms; + IsDualRank = ((NBPtr->ChannelPtr->DimmDrPresent & (UINT8) 1 << (ChipSelect >> 1)) != 0) ? TRUE : FALSE; + + // Dram nominal termination + if (Dimms == 1) { + DramTerm = 1; // 60 Ohms + } else { + DramTerm = 3; // 40 Ohms + } + + // Dram dynamic termination + if (Dimms < 2) { + DramTermDyn = 0; // Disabled + } else { + DramTermDyn = 2; // 120 Ohms + } + + if (OdtMode == WRITE_LEVELING_MODE) { + if (ChipSelect == TargetCS) { + DramTerm = DramTermDyn; + + // Program WrLvOdt, the target DIMM should be the closest DIMM. + DimmsPerChPtr = MemRecFindPSOverrideEntry (NBPtr->RefPtr->PlatformMemoryConfiguration, PSO_MAX_DIMMS, 0, NBPtr->ChannelPtr->ChannelID); + if (DimmsPerChPtr != NULL) { + MaxDimmsPerChannel = *DimmsPerChPtr; + } else { + MaxDimmsPerChannel = 2; + } + + if (MaxDimmsPerChannel == 3) { + if (NBPtr->ChannelPtr->DimmQrPresent != 0) { + WrLvOdt = 0xF; + } else { + WrLvOdt = 7; + } + } else { + if (NBPtr->ChannelPtr->DimmQrPresent != 0) { + WrLvOdt = 0xB; + } else if (Dimms == 2) { + WrLvOdt = 3; + } else if (IsDualRank) { + WrLvOdt = 8; + } else { + WrLvOdt = 2; + } + } + MemRecNSetBitFieldNb (NBPtr, BFWrLvOdt, WrLvOdt); + } + } + MemRecNSetBitFieldNb (NBPtr, BFDramTerm, DramTerm); + MemRecNSetBitFieldNb (NBPtr, BFDramTermDyn, DramTermDyn); +} |