diff options
Diffstat (limited to 'src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mtsdi3.c')
| -rwxr-xr-x | src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mtsdi3.c | 521 |
1 files changed, 521 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mtsdi3.c b/src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mtsdi3.c new file mode 100755 index 0000000000..e789fcf065 --- /dev/null +++ b/src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mtsdi3.c @@ -0,0 +1,521 @@ +/** + * @file + * + * mtsdi3.c + * + * Technology Software DRAM Init for DDR3 + * + * @xrefitem bom "File Content Label" "Release Content" + * @e project: AGESA + * @e sub-project: (Mem/Tech/DDR3) + * @e \$Revision: 44323 $ @e \$Date: 2010-12-22 01:24:58 -0700 (Wed, 22 Dec 2010) $ + * + **/ +/***************************************************************************** +* +* Copyright (c) 2011, Advanced Micro Devices, Inc. +* All rights reserved. +* +* Redistribution and use in source and binary forms, with or without +* modification, are permitted provided that the following conditions are met: +* * Redistributions of source code must retain the above copyright +* notice, this list of conditions and the following disclaimer. +* * Redistributions in binary form must reproduce the above copyright +* notice, this list of conditions and the following disclaimer in the +* documentation and/or other materials provided with the distribution. +* * Neither the name of Advanced Micro Devices, Inc. nor the names of +* its contributors may be used to endorse or promote products derived +* from this software without specific prior written permission. +* +* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND +* ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED +* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE +* DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY +* DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES +* (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; +* LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND +* ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT +* (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS +* SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. +* +* *************************************************************************** +* +*/ + + +/* + *---------------------------------------------------------------------------- + * MODULES USED + * + *---------------------------------------------------------------------------- + */ + + + +#include "AGESA.h" +#include "Ids.h" +#include "mm.h" +#include "mn.h" +#include "mu.h" +#include "mt.h" +#include "mt3.h" +#include "mtsdi3.h" +#include "mtrci3.h" +#include "merrhdl.h" +#include "Filecode.h" +#define FILECODE PROC_MEM_TECH_DDR3_MTSDI3_FILECODE +/*---------------------------------------------------------------------------- + * DEFINITIONS AND MACROS + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * TYPEDEFS AND STRUCTURES + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * PROTOTYPES OF LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +VOID +STATIC +MemTEMRS33 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ); + +VOID +STATIC +MemTMRS3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ); + + +/*---------------------------------------------------------------------------- + * EXPORTED FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function initiates software DRAM init for both DCTs + * at the same time. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +BOOLEAN +MemTDramInitSw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + UINT8 Dct; + UINT8 ChipSel; + UINT32 Dummy; + + MEM_DATA_STRUCT *MemPtr; + DIE_STRUCT *MCTPtr; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + MemPtr = NBPtr->MemPtr; + MCTPtr = NBPtr->MCTPtr; + + IDS_HDT_CONSOLE ("!\nStart Dram Init\n"); + // 3.Program F2x[1,0]7C[EnDramInit]=1 + IDS_HDT_CONSOLE ("\tEnDramInit = 1 for both DCTs\n"); + NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 1); + NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE); + + // 4.wait 200us + MemUWait10ns (20000, MemPtr); + + // 5.Program F2x[1, 0]7C[DeassertMemRstX] = 1. + NBPtr->BrdcstSet (NBPtr, BFDeassertMemRstX, 1); + + // 6.wait 500us + MemUWait10ns (50000, MemPtr); + + // Do Phy Fence training before sending MRS commands + if (!NBPtr->IsSupported[FenceTrnBeforeDramInit]) { + AGESA_TESTPOINT (TpProcMemPhyFenceTraining, &(NBPtr->MemPtr->StdHeader)); + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + if (NBPtr->DCTPtr->Timings.DctMemSize != 0) { + IDS_HDT_CONSOLE ("!\tDct %d\n", Dct); + NBPtr->PhyFenceTraining (NBPtr); + } + } + } + + // 7.NOP or deselect & take CKE high + NBPtr->BrdcstSet (NBPtr, BFAssertCke, 1); + + // 8.wait 360ns + MemUWait10ns (36, MemPtr); + + // The following steps are performed once for each channel with unbuffered DIMMs + // and once for each chip select on registered DIMMs: + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + if (NBPtr->DCTPtr->Timings.DctMemSize != 0) { + IDS_HDT_CONSOLE ("!\tDct %d\n", Dct); + // The following steps are performed with registered DIMMs only and + // must be done for each chip select pair: + if (MCTPtr->Status[SbRegistered]) { + MemTDramControlRegInit3 (TechPtr); + } + + for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { + if (NBPtr->GetSysAddr (NBPtr, ChipSel, &Dummy)) { + IDS_HDT_CONSOLE ("!\t\tCS %d\n", ChipSel); + // if chip select present + MemTSendAllMRCmds3 (TechPtr, ChipSel); + // NOTE: wait 512 clocks for DLL-relock + MemUWait10ns (50000, NBPtr->MemPtr); // wait 500us + if (!MCTPtr->Status[SbRegistered]) { + break; + } + } + } + + // 17.Send two ZQCL commands (to even then odd chip select) + NBPtr->sendZQCmd (NBPtr); + NBPtr->sendZQCmd (NBPtr); + } + } + + // 18.Program F2x[1,0]7C[EnDramInit]=0 + NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 0); + NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE); + // + // For Unbuffered Dimms, Issue MRS for remaining CS without EnDramInit + // + if (!MCTPtr->Status[SbRegistered]) { + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + if (NBPtr->DCTPtr->Timings.DctMemSize != 0) { + IDS_HDT_CONSOLE ("!\tDct %d\n", Dct); + for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { + if (NBPtr->GetSysAddr (NBPtr, ChipSel, &Dummy)) { + IDS_HDT_CONSOLE ("!\t\tCS %d\n", ChipSel); + // if chip select present + MemTSendAllMRCmds3 (TechPtr, ChipSel); + // NOTE: wait 512 clocks for DLL-relock + MemUWait10ns (50000, NBPtr->MemPtr); // wait 500us + } + } + } + } + } + + + IDS_HDT_CONSOLE ("End Dram Init\n\n"); + return (BOOLEAN) (MCTPtr->ErrCode < AGESA_FATAL); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function calculates the EMRS1 value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Wl - Indicates if WL mode should be enabled + * @param[in] TargetDIMM - DIMM target for WL + */ + +VOID +MemTEMRS13 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN BOOLEAN Wl, + IN UINT8 TargetDIMM + ) +{ + UINT16 MrsAddress; + UINT8 MaxDimmPerCH; + UINT8 ChipSel; + UINT8 Value8; + + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, + NBPtr->MCTPtr->SocketId, + NBPtr->ChannelPtr->ChannelID); + ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel)); + + // BA2=0,BA1=0,BA0=1 + NBPtr->SetBitField (NBPtr, BFMrsBank, 1); + + MrsAddress = 0; + + // program MrsAddress[5,1]=output driver impedance control (DIC): + // based on F2x[1,0]84[DrvImpCtrl] + Value8 = (UINT8)NBPtr->GetBitField (NBPtr, BFDrvImpCtrl); + if ((Value8 & ((UINT8) 1 << 1)) != 0) { + MrsAddress |= ((UINT16) 1 << 5); + } + if ((Value8 & ((UINT8) 1 << 0)) != 0) { + MrsAddress |= ((UINT16) 1 << 1); + } + + // program MrsAddress[9,6,2]=nominal termination resistance of ODT (RTT): + // Different CS may have different RTT. + // + if (NBPtr->MCTPtr->Status[SbRegistered]) { + // + // Registered Dimms + // + if ((NBPtr->ChannelPtr->DimmQrPresent & ((UINT16) (1 << (ChipSel >> 1)))) != 0) { + Value8 = NBPtr->PsPtr->QR_DramTerm; + } else { + Value8 = NBPtr->PsPtr->DramTerm; + } + } else { + // + // Unbuffered Dimms + // + Value8 = NBPtr->PsPtr->DramTerm; + } + // + // If Write Leveling this DIMM + // + if (Wl) { + if ((ChipSel >> 1) == TargetDIMM) { + // Program MrsAddress[7] = 1 for Write leveling enable + MrsAddress |= ((UINT16) 1 << 7); + if (ChipSel & 1) { + // Output buffer disabled, MrsAddress[7] (Qoff = 1) + MrsAddress |= ((UINT16) 1 << 12); + } + // Set Rtt_Nom = Rtt_Wr if there are 2 or more dimms + if ((NBPtr->ChannelPtr->DimmQrPresent != 0) || (NBPtr->ChannelPtr->Dimms >= 2)) { + Value8 = NBPtr->PsPtr->DynamicDramTerm; + } + } + } + // + // Turn off Rtt_Nom (DramTerm=0) for certain CS in certain configs. + // + // All odd CS for 4 Dimm Systems + if (MaxDimmPerCH == 4) { + if (ChipSel & 0x01) { + Value8 = 0; + } + // CS 1 and 5 for 3 Dimm configs + } else if (MaxDimmPerCH == 3) { + if ((ChipSel == 1) || (ChipSel == 5)) { + Value8 = 0; + } + } + // All odd CS of any QR Dimms + if ((NBPtr->ChannelPtr->DimmQrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) { + if (ChipSel & 0x01) { + Value8 = 0; + } + } + if ((Value8 & ((UINT8) 1 << 2)) != 0) { + MrsAddress |= ((UINT16) 1 << 9); + } + if ((Value8 & ((UINT8) 1 << 1)) != 0) { + MrsAddress |= ((UINT16) 1 << 6); + } + if ((Value8 & ((UINT8) 1 << 0)) != 0) { + MrsAddress |= ((UINT16) 1 << 2); + } + + // program MrsAddress[12]=output disable (QOFF): + // based on F2x[1,0]84[Qoff] + if (NBPtr->GetBitField (NBPtr, BFQoff) != 0) { + MrsAddress |= ((UINT16) 1 << 12); + } + + // program MrsAddress[11]=TDQS: + // based on F2x[1,0]94[RDqsEn] + if (NBPtr->GetBitField (NBPtr, BFRDqsEn) != 0) { + MrsAddress |= ((UINT16) 1 << 11); + } + + NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function calculates the EMRS2 value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +VOID +MemTEMRS23 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + UINT32 MrsAddress; + UINT8 DramTermDyn; + UINT8 MaxDimmPerCH; + UINT8 ChipSel; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, NBPtr->MCTPtr->SocketId, NBPtr->ChannelPtr->ChannelID ); + ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel)); + + // BA2=0,BA1=1,BA0=0 + NBPtr->SetBitField (NBPtr, BFMrsBank, 2); + + // program MrsAddress[5:3]=CAS write latency (CWL): + // based on F2x[1,0]84[Tcwl] + MrsAddress = NBPtr->GetBitField (NBPtr, BFTcwl) << 3; + + // program MrsAddress[6]=auto self refresh method (ASR): + // based on F2x[1,0]84[ASR] + // program MrsAddress[7]=self refresh temperature range (SRT): + // based on F2x[1,0]84[ASR and SRT] + MrsAddress |= NBPtr->GetBitField (NBPtr, BFASR) << 6; + MrsAddress |= NBPtr->GetBitField (NBPtr, BFSRT) << 7; + + // program MrsAddress[10:9]=dynamic termination during writes (RTT_WR): + // based on F2x[1,0]84[DramTermDyn] + DramTermDyn = (UINT8) NBPtr->GetBitField (NBPtr, BFDramTermDyn); + // Special Case for 1 DR Unbuffered Dimm in 3 Dimm/Ch + if (!(NBPtr->MCTPtr->Status[SbRegistered])) { + if (MaxDimmPerCH == 3) { + if (NBPtr->ChannelPtr->Dimms == 1) { + if ((NBPtr->ChannelPtr->DimmDrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) { + DramTermDyn = 1; + } + } + } + } + MrsAddress |= (UINT16) DramTermDyn << 9; + + NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function calculates the EMRS3 value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +VOID +STATIC +MemTEMRS33 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + // BA2=0,BA1=1,BA0=1 + NBPtr->SetBitField (NBPtr, BFMrsBank, 3); + + // program MrsAddress[1:0]=multi purpose register address location + // (MPR Location):based on F2x[1,0]84[MprLoc] + // program MrsAddress[2]=multi purpose register + // (MPR):based on F2x[1,0]84[MprEn] + NBPtr->SetBitField (NBPtr, BFMrsAddress, (NBPtr->GetBitField (NBPtr, BFDramMRSReg) >> 24) & 0x0007); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This sets MRS value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +VOID +STATIC +MemTMRS3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + UINT32 MrsAddress; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + // BA2=0,BA1=0,BA0=0 + NBPtr->SetBitField (NBPtr, BFMrsBank, 0); + + // program MrsAddress[1:0]=burst length and control method + // (BL):based on F2x[1,0]84[BurstCtrl] + MrsAddress = NBPtr->GetBitField (NBPtr, BFBurstCtrl); + + // program MrsAddress[3]=1 (BT):interleaved + MrsAddress |= (UINT16) 1 << 3; + + // program MrsAddress[6:4,2]=read CAS latency + // (CL):based on F2x[1,0]88[Tcl] + // -- F2x88[3:0] to MrsAddress[6:4,2]=xxx0b -- + MrsAddress |= NBPtr->GetBitField (NBPtr, BFTcl) << 4; + + // program MrsAddress[11:9]=write recovery for auto-precharge + // (WR):based on F2x[1,0]84[Twr] + MrsAddress |= NBPtr->GetBitField (NBPtr, BFTwrDDR3) << 9; + + // program MrsAddress[12] (PPD):based on F2x[1,0]84[PChgPDModeSel] + MrsAddress |= NBPtr->GetBitField (NBPtr, BFPchgPDModeSel) << 12; + + // program MrsAddress[8]=1 (DLL):DLL reset + MrsAddress |= (UINT32) 1 << 8; + + NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This send all MR commands to a rank in sequence 2-3-1-0 + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] ChipSel - Target Chip Select + */ + +VOID +MemTSendAllMRCmds3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 ChipSel + ) +{ + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel); + + // 13.Send EMRS(2) + MemTEMRS23 (TechPtr); + NBPtr->SendMrsCmd (NBPtr); + + // 14.Send EMRS(3). Ordinarily at this time, MrsAddress[2:0]=000b + MemTEMRS33 (TechPtr); + NBPtr->SendMrsCmd (NBPtr); + + // 15.Send EMRS(1). + MemTEMRS13 (TechPtr, FALSE, (ChipSel >> 1)); + NBPtr->SendMrsCmd (NBPtr); + + // 16.Send MRS with MrsAddress[8]=1(reset the DLL) + MemTMRS3 (TechPtr); + NBPtr->SendMrsCmd (NBPtr); +} |