diff options
Diffstat (limited to 'src/mainboard/bap/ode_e21XX/BAP_Q7_1066.spd.hex')
| -rw-r--r-- | src/mainboard/bap/ode_e21XX/BAP_Q7_1066.spd.hex | 217 |
1 files changed, 0 insertions, 217 deletions
diff --git a/src/mainboard/bap/ode_e21XX/BAP_Q7_1066.spd.hex b/src/mainboard/bap/ode_e21XX/BAP_Q7_1066.spd.hex deleted file mode 100644 index b6da468a88..0000000000 --- a/src/mainboard/bap/ode_e21XX/BAP_Q7_1066.spd.hex +++ /dev/null @@ -1,217 +0,0 @@ -# SPDX-License-Identifier: GPL-2.0-only - -# Memory chip: Hynix H5TQ4G63MFR-PBC with ECC -# BAP ODE E21XX has 2GB RAM soldered down on the Q7 -# Memory setting for DDR-1066 - -# 0 Number of SPD Bytes used / Total SPD Size / CRC Coverage -# bits[3:0]: 1 = 128 SPD Bytes Used -# bits[6:4]: 1 = 256 SPD Bytes Total -# bit7 : 0 = CRC covers bytes 0 ~ 125 -11 - -# 1 SPD Revision - -# 0x12 = Revision 1.2 -12 - -# 2 Key Byte / DRAM Device Type -# bits[7:0]: 0x0b = DDR3 SDRAM -0B - -# 3 Key Byte / Module Type -# bits[3:0]: 3 = SO-DIMM -# bits[7:4]: reserved -03 - -# 4 SDRAM CHIP Density and Banks -# bits[3:0]: 4 = 4 Gigabits Total SDRAM capacity per chip -# bits[6:4]: 0 = 3 (8 banks) -# bit7 : reserved -04 - -# 5 SDRAM Addressing -# bits[2:0]: 1 = 10 Column Address Bits -# bits[5:3]: 3 = 15 Row Address Bits -# bits[7:6]: reserved -19 - -# 6 Module Nominal Voltage, VDD -# bit0 : 0 = 1.5 V operable -# bit1 : 0 = NOT 1.35 V operable -# bit2 : 0 = NOT 1.25 V operable -# bits[7:3]: reserved -00 - -# 7 Module Organization -# bits[2:0]: 2 = 16 bits -# bits[5:3]: 0 = 1 Rank -# bits[7:6]: reserved -02 - -# 8 Module Memory Bus Width -# bits[2:0]: 3 = Primary bus width is 64 bits -# bits[4:3]: 1 = 1 bit (bus width extension ECC) -# bits[7:5]: reserved -0B - -# 9 Fine Timebase (FTB) Dividend / Divisor -# bits[3:0]: 0x01 divisor -# bits[7:4]: 0x01 dividend -# 1/1 = 1ps -11 - -# 10 Medium Timebase (MTB) Dividend -# 11 Medium Timebase (MTB) Divisor -# 1 / 8 = .125 ns - used for DDR3 -01 08 - -# 12 SDRAM Minimum Cycle Time (tCKmin) -# 0x0F = tCKmin of 1.875 ns = DDR3-1066 (533 MHz clock) -0F - -# 13 Reserved -00 - -# 14 CAS Latencies Supported, Least Significant Byte -# 15 CAS Latencies Supported, Most Significant Byte -# Cas Latencies of 8 - 5 are supported -1E 00 - -# 16 Minimum CAS Latency Time (tAAmin) -# 0x69 = 13.125ns - DDR3-1066F -69 - -# 17 Minimum Write Recovery Time (tWRmin) -# 0x78 = tWR of 15ns - All DDR3 speed grades -78 - -# 18 Minimum RAS# to CAS# Delay Time (tRCDmin) -# 0x69 = 13.125ns - DDR3-1066F -69 - -# 19 Minimum Row Active to Row Active Delay Time (tRRDmin) -# 0x3C = 7.5ns -3C - -# 20 Minimum Row Precharge Delay Time (tRPmin) -# 0x69 = 13.125ns - DDR3-1066F -69 - -# 21 Upper Nibbles for tRAS and tRC -# bits[3:0]: tRAS most significant nibble = 1 (see byte 22) -# bits[7:4]: tRC most significant nibble = 1 (see byte 23) -11 - -# 22 Minimum Active to Precharge Delay Time (tRASmin), LSB -# 0x12C = 37.5ns - DDR3-1066 (see byte 21) -2C - -# 23 Minimum Active to Active/Refresh Delay Time (tRCmin), LSB -# 0x195 = 50.625ns - DDR3-1066F (see byte 21) -95 - -# 24 Minimum Refresh Recovery Delay Time (tRFCmin), LSB -# 25 Minimum Refresh Recovery Delay Time (tRFCmin), MSB -# 0x500 = 160ns - for 2 Gigabit chips -80 07 - -# 26 Minimum Internal Write to Read Command Delay Time (tWTRmin) -# 0x3c = 7.5 ns - All DDR3 SDRAM speed bins -3C - -# 27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin) -# 0x3c = 7.5ns - All DDR3 SDRAM speed bins -3C - -# 28 Upper Nibble for tFAWmin -# 29 Minimum Four Activate Window Delay Time (tFAWmin) -# 0x0190 = 50ns - DDR3-1066, 2 KB page size -01 90 - -# 30 SDRAM Optional Feature -# bit0 : 1= RZQ/6 supported -# bit1 : 1 = RZQ/7 supported -# bits[6:2]: reserved -# bit7 : 0 = DLL Off mode supported -03 - -# 31 SDRAM Thermal and Refresh Options -# bit0 : 0 = Temp up to 95c supported -# bit1 : 0 = 85-95c uses 2x refresh rate -# bit2 : 1 = Auto Self Refresh supported -# bit3 : 0 = no on die thermal sensor -# bits[6:4]: reserved -# bit7 : 0 = partial self refresh supported -04 - -# 32 Module Thermal Sensor -# 0 = Thermal sensor not incorporated onto this assembly -00 - -# 33 SDRAM Device Type -# bits[1:0]: 0 = Signal Loading not specified -# bits[3:2]: reserved -# bits[6:4]: 0 = Die count not specified -# bit7 : 0 = Standard Monolithic DRAM Device -00 - -# 34 Fine Offset for SDRAM Minimum Cycle Time (tCKmin) -# 35 Fine Offset for Minimum CAS Latency Time (tAAmin) -# 36 Fine Offset for Minimum RAS# to CAS# Delay Time (tRCDmin) -# 37 Fine Offset for Minimum Row Precharge Delay Time (tRPmin) -# 38 Fine Offset for Minimum Active to Active/Refresh Delay (tRCmin) -00 00 00 00 00 - -# 39 - 59 (reserved) -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 - -# 60 Raw Card Extension, Module Nominal Height -# bits[4:0]: 0 = <= 15mm tall -# bits[7:5]: 0 = raw card revision 0-3 -00 - -# 61 Module Maximum Thickness -# bits[3:0]: 0 = thickness front <= 1mm -# bits[7:4]: 0 = thinkness back <= 1mm -00 - -# 62 Reference Raw Card Used -# bits[4:0]: 0 = Reference Raw card A used -# bits[6:5]: 0 = revision 0 -# bit7 : 0 = Reference raw cards A through AL -00 - -# 63 Address Mapping from Edge Connector to DRAM -# bit0 : 0 = standard mapping (not mirrored) -# bits[7:1]: reserved -00 - -# 64 - 116 (reserved) -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 00 00 00 -00 00 00 00 00 - -# 117 - 118 Module ID: Module Manufacturers JEDEC ID Code -# 0x80AD = Hynix -80 AD - -# 119 Module ID: Module Manufacturing Location - oem specified -# 120 Module ID: Module Manufacture Year in BCD -# 0x00 = 2000 -00 00 - -# 121 Module ID: Module Manufacture week -# 0x00 = 0th week -00 - -# 122 - 125: Module Serial Number -00 00 00 00 - -# 126 - 127: Cyclical Redundancy Code -E9 40 |