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authorFrank Vibrans <frank.vibrans@amd.com>2011-02-14 18:30:54 +0000
committerMarc Jones <marc.jones@amd.com>2011-02-14 18:30:54 +0000
commit2b4c831b4d16b55a7abdea20bce82cccd168232c (patch)
tree95a35c737d16119f1dfa9c1c9d7700710d8a04f7 /src/vendorcode/amd/agesa/Proc/Mem/Tech/DDR3/mtsdi3.c
parent74ad66cdc143e04f976ba21e538e02b20362d7e6 (diff)
Add AMD Agesa and AMD CIMx SB800 code. Patch 1 of 8.
This code currently generates many warnings that are functionally benign. These are being addressed, but the wheels of bureaucracy turn slowly. This drop supports AMD cpu families 10h and 14h. Only Family 14h is used as an example in this set of patches. Other cpu families are supported by the infrastructure, but their specific support is not included herein. This patch is functionally independent of the other patches in this set. Signed-off-by: Frank Vibrans <frank.vibrans@amd.com> Acked-by: Stefan Reinauer <stefan.reinauer@coreboot.org> Acked-by: Marc Jones <marcj303@gmail.com> git-svn-id: svn://svn.coreboot.org/coreboot/trunk@6344 2b7e53f0-3cfb-0310-b3e9-8179ed1497e1
Diffstat (limited to 'src/vendorcode/amd/agesa/Proc/Mem/Tech/DDR3/mtsdi3.c')
-rw-r--r--src/vendorcode/amd/agesa/Proc/Mem/Tech/DDR3/mtsdi3.c493
1 files changed, 493 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/Proc/Mem/Tech/DDR3/mtsdi3.c b/src/vendorcode/amd/agesa/Proc/Mem/Tech/DDR3/mtsdi3.c
new file mode 100644
index 0000000000..48dc007b10
--- /dev/null
+++ b/src/vendorcode/amd/agesa/Proc/Mem/Tech/DDR3/mtsdi3.c
@@ -0,0 +1,493 @@
+/* $NoKeywords:$ */
+/**
+ * @file
+ *
+ * mtsdi3.c
+ *
+ * Technology Software DRAM Init for DDR3
+ *
+ * @xrefitem bom "File Content Label" "Release Content"
+ * @e project: AGESA
+ * @e sub-project: (Mem/Tech/DDR3)
+ * @e \$Revision: 37303 $ @e \$Date: 2010-09-02 03:43:36 +0800 (Thu, 02 Sep 2010) $
+ *
+ **/
+/*
+ *****************************************************************************
+ *
+ * Copyright (c) 2011, Advanced Micro Devices, Inc.
+ * All rights reserved.
+ *
+ * Redistribution and use in source and binary forms, with or without
+ * modification, are permitted provided that the following conditions are met:
+ * * Redistributions of source code must retain the above copyright
+ * notice, this list of conditions and the following disclaimer.
+ * * Redistributions in binary form must reproduce the above copyright
+ * notice, this list of conditions and the following disclaimer in the
+ * documentation and/or other materials provided with the distribution.
+ * * Neither the name of Advanced Micro Devices, Inc. nor the names of
+ * its contributors may be used to endorse or promote products derived
+ * from this software without specific prior written permission.
+ *
+ * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND
+ * ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
+ * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
+ * DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY
+ * DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES
+ * (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES;
+ * LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND
+ * ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT
+ * (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS
+ * SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+ *
+ * ***************************************************************************
+ *
+ */
+
+
+/*
+ *----------------------------------------------------------------------------
+ * MODULES USED
+ *
+ *----------------------------------------------------------------------------
+ */
+
+
+
+#include "AGESA.h"
+#include "Ids.h"
+#include "mm.h"
+#include "mn.h"
+#include "mu.h"
+#include "mt.h"
+#include "mt3.h"
+#include "mtsdi3.h"
+#include "mtrci3.h"
+#include "merrhdl.h"
+#include "Filecode.h"
+CODE_GROUP (G1_PEICC)
+RDATA_GROUP (G1_PEICC)
+#define FILECODE PROC_MEM_TECH_DDR3_MTSDI3_FILECODE
+/*----------------------------------------------------------------------------
+ * DEFINITIONS AND MACROS
+ *
+ *----------------------------------------------------------------------------
+ */
+
+/*----------------------------------------------------------------------------
+ * TYPEDEFS AND STRUCTURES
+ *
+ *----------------------------------------------------------------------------
+ */
+
+/*----------------------------------------------------------------------------
+ * PROTOTYPES OF LOCAL FUNCTIONS
+ *
+ *----------------------------------------------------------------------------
+ */
+
+/*----------------------------------------------------------------------------
+ * EXPORTED FUNCTIONS
+ *
+ *----------------------------------------------------------------------------
+ */
+
+
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function initiates software DRAM init for both DCTs
+ * at the same time.
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+BOOLEAN
+MemTDramInitSw3 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ UINT8 Dct;
+ UINT8 ChipSel;
+ UINT32 Dummy;
+
+ MEM_DATA_STRUCT *MemPtr;
+ DIE_STRUCT *MCTPtr;
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+ MemPtr = NBPtr->MemPtr;
+ MCTPtr = NBPtr->MCTPtr;
+
+ IDS_HDT_CONSOLE (MEM_STATUS, "\nStart Dram Init\n");
+ // 3.Program F2x[1,0]7C[EnDramInit]=1
+ IDS_HDT_CONSOLE (MEM_FLOW, "\tEnDramInit = 1 for both DCTs\n");
+ NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 1);
+ NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE);
+
+ // 4.wait 200us
+ MemUWait10ns (20000, MemPtr);
+
+ // 5.Program F2x[1, 0]7C[DeassertMemRstX] = 1.
+ NBPtr->BrdcstSet (NBPtr, BFDeassertMemRstX, 1);
+
+ // 6.wait 500us
+ MemUWait10ns (50000, MemPtr);
+
+ // Do Phy Fence training before sending MRS commands
+ if (!NBPtr->IsSupported[FenceTrnBeforeDramInit]) {
+ AGESA_TESTPOINT (TpProcMemPhyFenceTraining, &(NBPtr->MemPtr->StdHeader));
+ for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
+ NBPtr->SwitchDCT (NBPtr, Dct);
+ if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
+ IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
+ NBPtr->PhyFenceTraining (NBPtr);
+ }
+ }
+ }
+
+ // 7.NOP or deselect & take CKE high
+ NBPtr->BrdcstSet (NBPtr, BFAssertCke, 1);
+
+ // 8.wait 360ns
+ MemUWait10ns (36, MemPtr);
+
+ // The following steps are performed once for each channel with unbuffered DIMMs
+ // and once for each chip select on registered DIMMs:
+ for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
+ NBPtr->SwitchDCT (NBPtr, Dct);
+ if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
+ IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
+
+ // Enable Dram Parity if appropriate.
+ NBPtr->FamilySpecificHook[EnableParityAfterMemRst] (NBPtr, NULL);
+
+ // The following steps are performed with registered DIMMs only and
+ // must be done for each chip select pair:
+ if (MCTPtr->Status[SbRegistered]) {
+ MemTDramControlRegInit3 (TechPtr);
+ }
+
+ // Initialize LRDIMM's register
+ TechPtr->TechnologySpecificHook[LrdimmControlRegInit] (TechPtr, NULL);
+
+ for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) {
+ if (NBPtr->GetSysAddr (NBPtr, ChipSel, &Dummy)) {
+ IDS_HDT_CONSOLE (MEM_STATUS, "\t\tCS %d\n", ChipSel);
+ // if chip select present
+ if (!(TechPtr->TechnologySpecificHook[LrdimmSendAllMRCmds] (TechPtr, &ChipSel))) {
+ MemTSendAllMRCmds3 (TechPtr, ChipSel);
+ }
+ // NOTE: wait 512 clocks for DLL-relock
+ MemUWait10ns (50000, NBPtr->MemPtr); // wait 500us
+ if (!(MCTPtr->Status[SbRegistered] || MCTPtr->Status[SbLrdimms])) {
+ break;
+ }
+ }
+ }
+
+ // 17.Send two ZQCL commands (to even then odd chip select)
+ NBPtr->sendZQCmd (NBPtr);
+ NBPtr->sendZQCmd (NBPtr);
+ }
+ }
+
+ // 18.Program F2x[1,0]7C[EnDramInit]=0
+ NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 0);
+ NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE);
+ //
+ // For Unbuffered Dimms, Issue MRS for remaining CS without EnDramInit
+ //
+ NBPtr->FamilySpecificHook[SendMrsCmdsPerCs] (NBPtr, NBPtr);
+
+ IDS_HDT_CONSOLE (MEM_FLOW, "End Dram Init\n\n");
+ return (BOOLEAN) (MCTPtr->ErrCode < AGESA_FATAL);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function calculates the EMRS1 value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ * @param[in] Wl - Indicates if WL mode should be enabled
+ * @param[in] TargetDIMM - DIMM target for WL
+ */
+
+VOID
+MemTEMRS13 (
+ IN OUT MEM_TECH_BLOCK *TechPtr,
+ IN BOOLEAN Wl,
+ IN UINT8 TargetDIMM
+ )
+{
+ UINT16 MrsAddress;
+ UINT8 MaxDimmPerCH;
+ UINT8 ChipSel;
+ UINT8 Value8;
+
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+ MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration,
+ NBPtr->MCTPtr->SocketId,
+ NBPtr->ChannelPtr->ChannelID);
+ ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel));
+
+ // BA2=0,BA1=0,BA0=1
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 1);
+
+ MrsAddress = 0;
+
+ // program MrsAddress[5,1]=output driver impedance control (DIC):
+ // based on F2x[1,0]84[DrvImpCtrl]
+ if (!(NBPtr->IsSupported[CheckDrvImpCtrl])) {
+ Value8 = (UINT8)NBPtr->GetBitField (NBPtr, BFDrvImpCtrl);
+ if ((Value8 & ((UINT8) 1 << 1)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 5);
+ }
+ if ((Value8 & ((UINT8) 1 << 0)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 1);
+ }
+ } else {
+ MrsAddress |= ((UINT16) 1 << 1);
+ }
+ // program MrsAddress[9,6,2]=nominal termination resistance of ODT (RTT):
+ // Different CS may have different RTT.
+ //
+ Value8 = NBPtr->MemNGetDramTerm (NBPtr, ChipSel);
+
+ //
+ // If Write Leveling this DIMM
+ //
+ if (Wl) {
+ if ((ChipSel >> 1) == TargetDIMM) {
+ // Program MrsAddress[7] = 1 for Write leveling enable
+ MrsAddress |= ((UINT16) 1 << 7);
+ if (ChipSel & 1) {
+ // Output buffer disabled, MrsAddress[7] (Qoff = 1)
+ MrsAddress |= ((UINT16) 1 << 12);
+ }
+ // Set Rtt_Nom = Rtt_Wr if there are 2 or more dimms
+ if ((NBPtr->ChannelPtr->DimmQrPresent != 0) || (NBPtr->ChannelPtr->Dimms >= 2)) {
+ Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
+ }
+ }
+ }
+ //
+ // Turn off Rtt_Nom (DramTerm=0) for certain CS in certain configs.
+ //
+ // All odd CS for 4 Dimm Systems
+ if (MaxDimmPerCH == 4) {
+ if (ChipSel & 0x01) {
+ Value8 = 0;
+ }
+ // CS 1 and 5 for 3 Dimm configs
+ } else if (MaxDimmPerCH == 3) {
+ if ((ChipSel == 1) || (ChipSel == 5)) {
+ Value8 = 0;
+ }
+ }
+ // All odd CS of any QR Dimms
+ if ((NBPtr->ChannelPtr->DimmQrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) {
+ if (ChipSel & 0x01) {
+ Value8 = 0;
+ }
+ }
+ if ((Value8 & ((UINT8) 1 << 2)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 9);
+ }
+ if ((Value8 & ((UINT8) 1 << 1)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 6);
+ }
+ if ((Value8 & ((UINT8) 1 << 0)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 2);
+ }
+
+ // program MrsAddress[12]=output disable (QOFF):
+ // based on F2x[1,0]84[Qoff]
+
+ if (!NBPtr->IsSupported[CheckQoff]) {
+ if (NBPtr->GetBitField (NBPtr, BFQoff) != 0) {
+ MrsAddress |= ((UINT16) 1 << 12);
+ }
+ }
+
+ // program MrsAddress[11]=TDQS:
+ // based on F2x[1,0]94[RDqsEn]
+
+ if ((NBPtr->DCTPtr->Timings.Dimmx4Present != 0) && (NBPtr->DCTPtr->Timings.Dimmx8Present != 0)) {
+ MrsAddress |= ((UINT16) 1 << 11);
+ }
+
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function calculates the EMRS2 value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+VOID
+MemTEMRS23 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ UINT32 MrsAddress;
+ UINT8 DramTermDyn;
+ UINT8 MaxDimmPerCH;
+ UINT8 ChipSel;
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+
+ MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, NBPtr->MCTPtr->SocketId, NBPtr->ChannelPtr->ChannelID );
+ ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel));
+
+ // BA2=0,BA1=1,BA0=0
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 2);
+
+ // program MrsAddress[5:3]=CAS write latency (CWL):
+ MrsAddress = NBPtr->MemNGetMR2CWL (NBPtr);
+
+ // program MrsAddress[6]=auto self refresh method (ASR):
+ // program MrsAddress[7]=self refresh temperature range (SRT):
+ MrsAddress |= 1 << 6;
+ MrsAddress &= ( ~ (1 << 7));
+
+ // program MrsAddress[10:9]=dynamic termination during writes (RTT_WR):
+ DramTermDyn = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
+ // Special Case for 1 DR Unbuffered Dimm in 3 Dimm/Ch
+ if (!(NBPtr->MCTPtr->Status[SbRegistered])) {
+ if (MaxDimmPerCH == 3) {
+ if (NBPtr->ChannelPtr->Dimms == 1) {
+ if ((NBPtr->ChannelPtr->DimmDrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) {
+ DramTermDyn = 1;
+ }
+ }
+ }
+ }
+ MrsAddress |= (UINT16) DramTermDyn << 9;
+
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function calculates the EMRS3 value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+VOID
+MemTEMRS33 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+
+ // BA2=0,BA1=1,BA0=1
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 3);
+
+ // program MrsAddress[1:0]=multi purpose register address location
+ // (MPR Location):based on F2x[1,0]84[MprLoc]
+ // program MrsAddress[2]=multi purpose register
+ // (MPR):based on F2x[1,0]84[MprEn]
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, (NBPtr->GetBitField (NBPtr, BFDramMRSReg) >> 24) & 0x0007);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This sets MRS value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+VOID
+MemTMRS3 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ UINT32 MrsAddress;
+ MEM_NB_BLOCK *NBPtr;
+ UINT32 Ppd;
+
+ NBPtr = TechPtr->NBPtr;
+
+ // BA2=0,BA1=0,BA0=0
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 0);
+
+ // program MrsAddress[1:0]=burst length and control method
+ // (BL):based on F2x[1,0]84[BurstCtrl]
+ MrsAddress = NBPtr->GetBitField (NBPtr, BFBurstCtrl);
+
+ // program MrsAddress[3]=1 (BT):interleaved
+ MrsAddress |= (UINT16) 1 << 3;
+
+ // program MrsAddress[6:4,2]=read CAS latency
+ MrsAddress |= NBPtr->MemNGetMR0CL (NBPtr);
+
+ // program MrsAddress[11:9]=write recovery for auto-precharge
+ MrsAddress |= NBPtr->MemNGetMR0WR (NBPtr);
+
+ // program MrsAddress[12] (PPD):based on F2x[1,0]84[PChgPDModeSel]
+ Ppd = NBPtr->GetBitField (NBPtr, BFPchgPDModeSel);
+ NBPtr->FamilySpecificHook[MR0_PPD] (NBPtr, &Ppd);
+ IDS_OPTION_HOOK (IDS_MEM_MR0, &Ppd, &TechPtr->NBPtr->MemPtr->StdHeader);
+ MrsAddress |= Ppd << 12;
+
+ // program MrsAddress[8]=1 (DLL):DLL reset
+ MrsAddress |= (UINT32) 1 << 8;
+
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This send all MR commands to a rank in sequence 2-3-1-0
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ * @param[in] ChipSel - Target Chip Select
+ */
+
+VOID
+MemTSendAllMRCmds3 (
+ IN OUT MEM_TECH_BLOCK *TechPtr,
+ IN UINT8 ChipSel
+ )
+{
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+
+ NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel);
+
+ // 13.Send EMRS(2)
+ MemTEMRS23 (TechPtr);
+ NBPtr->SendMrsCmd (NBPtr);
+
+ // 14.Send EMRS(3). Ordinarily at this time, MrsAddress[2:0]=000b
+ MemTEMRS33 (TechPtr);
+ NBPtr->SendMrsCmd (NBPtr);
+
+ // 15.Send EMRS(1).
+ MemTEMRS13 (TechPtr, FALSE, (ChipSel >> 1));
+ NBPtr->SendMrsCmd (NBPtr);
+
+ // 16.Send MRS with MrsAddress[8]=1(reset the DLL)
+ MemTMRS3 (TechPtr);
+ NBPtr->SendMrsCmd (NBPtr);
+}