summaryrefslogtreecommitdiff
path: root/src/cpu/samsung/exynos5420/setup.h
diff options
context:
space:
mode:
authorDavid Hendricks <dhendrix@chromium.org>2013-08-29 14:05:21 -0700
committerIsaac Christensen <isaac.christensen@se-eng.com>2014-08-12 22:19:27 +0200
commit122b6d6ce694cd55087b4956780b2bbde8ccc6fe (patch)
treee1bb08bf318a5cba449997d849d9b5788ccff02c /src/cpu/samsung/exynos5420/setup.h
parent72a42886505f54e81f437b618af1ab57e95c4b71 (diff)
exynos5420/pit: re-factor membaseconfig0/1 usage
membaseconfig0/1 are utterly dependent on the mainboard's particular DRAM setup. This defines their values in the mem_timings struct for pit. Signed-off-by: David Hendricks <dhendrix@chromium.org> Old-Change-Id: Ifd782d1229b2418f8ddbf0bcb3f45cc828ac34b0 Reviewed-on: https://chromium-review.googlesource.com/167488 Commit-Queue: David Hendricks <dhendrix@chromium.org> Tested-by: David Hendricks <dhendrix@chromium.org> Reviewed-by: ron minnich <rminnich@chromium.org> (cherry picked from commit 80eebd5bc0dbb9fabf81f46c25dcd5c5d5747579) exynos5420: necessary updates for DRAM This updates DRAM usage for Exynos5420 so that we can actually use 3.5GB: - Memory chips used with Exynos5420 may have 16 row address lines. Signed-off-by: David Hendricks <dhendrix@chromium.org> Old-Change-Id: I86d1a96d0d1a028587f7655f8de5a2e52165e9d2 Reviewed-on: https://chromium-review.googlesource.com/167489 Commit-Queue: David Hendricks <dhendrix@chromium.org> Tested-by: David Hendricks <dhendrix@chromium.org> Reviewed-by: ron minnich <rminnich@chromium.org> (cherry picked from commit 04bbaf5d8e125166dd689f656d5b37776be01fb1) Squashed two related commits. Change-Id: I4e45bc8a446715897ec21b0160701152fa6b226b Signed-off-by: Isaac Christensen <isaac.christensen@se-eng.com> Reviewed-on: http://review.coreboot.org/6613 Tested-by: build bot (Jenkins) Reviewed-by: Stefan Reinauer <stefan.reinauer@coreboot.org>
Diffstat (limited to 'src/cpu/samsung/exynos5420/setup.h')
-rw-r--r--src/cpu/samsung/exynos5420/setup.h16
1 files changed, 7 insertions, 9 deletions
diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h
index 3bd36b2e75..950c2c6f85 100644
--- a/src/cpu/samsung/exynos5420/setup.h
+++ b/src/cpu/samsung/exynos5420/setup.h
@@ -136,6 +136,7 @@ struct exynos5_phy_control;
#define DMC_MEMCONFIGx_CHIP_COL_10 (3 << 8)
#define DMC_MEMCONFIGx_CHIP_ROW_14 (2 << 4)
#define DMC_MEMCONFIGx_CHIP_ROW_15 (3 << 4)
+#define DMC_MEMCONFIGx_CHIP_ROW_16 (4 << 4)
#define DMC_MEMCONFIGx_CHIP_BANK_8 (3 << 0)
#define DMC_MEMBASECONFIGx_CHIP_BASE(x) (x << 16)
@@ -767,15 +768,12 @@ struct exynos5_phy_control;
#define DPWRDN_EN (1 << 1)
#define DSREF_EN (1 << 5)
-/* As we use channel interleaving, therefore value of the base address
- * register must be set as half of the bus base address
- * RAM start addess is 0x2000_0000 which means chip_base is 0x20, so
- * we need to set half 0x10 to the membaseconfigx registers
- * see exynos5420 UM section 17.17.3.21 for more
- */
-#define DMC_CHIP_BASE_0 0x10
-#define DMC_CHIP_BASE_1 0x50
-#define DMC_CHIP_MASK 0x7C0
+/* AXI base address mask */
+#define DMC_CHIP_MASK_256MB 0x7f0
+#define DMC_CHIP_MASK_512MB 0x7e0
+#define DMC_CHIP_MASK_1GB 0x7c0
+#define DMC_CHIP_MASK_2GB 0x780
+#define DMC_CHIP_MASK_4GB 0x700
#define MEMBASECONFIG_CHIP_MASK_VAL 0x7E0
#define MEMBASECONFIG_CHIP_MASK_OFFSET 0