/* * This file is part of the coreboot project. * * Copyright (C) 2012 Samsung Electronics * * This program is free software; you can redistribute it and/or modify * it under the terms of the GNU General Public License as published by * the Free Software Foundation; version 2 of the License. * * This program is distributed in the hope that it will be useful, * but WITHOUT ANY WARRANTY; without even the implied warranty of * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the * GNU General Public License for more details. * * You should have received a copy of the GNU General Public License * along with this program; if not, write to the Free Software * Foundation, Inc., 51 Franklin St, Fifth Floor, Boston, MA 02110-1301 USA */ /* DDR3 mem setup file for SMDK5250 board based on EXYNOS5 */ #include #include #include #include "clk.h" #include "cpu.h" #include "dmc.h" #include "setup.h" #define RDLVL_COMPLETE_TIMEOUT 10000 static void reset_phy_ctrl(void) { writel(LPDDR3PHY_CTRL_PHY_RESET_ENABLE, &exynos_clock->lpddr3phy_ctrl); writel(LPDDR3PHY_CTRL_PHY_RESET_DISABLE, &exynos_clock->lpddr3phy_ctrl); #if 0 /* * For proper memory initialization there should be a minimum delay of * 500us after the LPDDR3PHY_CTRL_PHY_RESET signal. * The below value is an approximate value whose calculation in done * considering that sdelay takes 2 instruction for every 1 delay cycle. * And assuming each instruction takes 1 clock cycle i.e 1/(1.7 Ghz)sec * So for 500 usec, the number of delay cycle should be * (500 * 10^-6) * (1.7 * 10^9) / 2 = 425000 * * TODO(hatim.rv@samsung.com): Implement the delay using timer/counter */ sdelay(425000); #endif udelay(500); } int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, int mem_reset) { unsigned int val; int i; if (mem_reset) reset_phy_ctrl(); /* Set Impedance Output Driver */ val = (mem->impedance << CA_CK_DRVR_DS_OFFSET) | (mem->impedance << CA_CKE_DRVR_DS_OFFSET) | (mem->impedance << CA_CS_DRVR_DS_OFFSET) | (mem->impedance << CA_ADR_DRVR_DS_OFFSET); writel(val, &exynos_phy0_control->phy_con39); writel(val, &exynos_phy1_control->phy_con39); /* Set Read Latency and Burst Length for PHY0 and PHY1 */ val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) | (mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT); writel(val, &exynos_phy0_control->phy_con42); writel(val, &exynos_phy1_control->phy_con42); /* ZQ Calibration */ if (dmc_config_zq(mem, exynos_phy0_control, exynos_phy1_control)){ printk(BIOS_EMERG, "DRAM ZQ CALIBRATION FAILURE\n"); return SETUP_ERR_ZQ_CALIBRATION_FAILURE; } /* DQ Signal */ writel(mem->phy0_pulld_dqs, &exynos_phy0_control->phy_con14); writel(mem->phy1_pulld_dqs, &exynos_phy1_control->phy_con14); writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT) | (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT), &exynos_dmc->concontrol); update_reset_dll(exynos_dmc, DDR_MODE_DDR3); /* DQS Signal */ writel(mem->phy0_dqs, &exynos_phy0_control->phy_con4); writel(mem->phy1_dqs, &exynos_phy1_control->phy_con4); writel(mem->phy0_dq, &exynos_phy0_control->phy_con6); writel(mem->phy1_dq, &exynos_phy1_control->phy_con6); writel(mem->phy0_tFS, &exynos_phy0_control->phy_con10); writel(mem->phy1_tFS, &exynos_phy1_control->phy_con10); val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | (mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) | (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); writel(val, &exynos_phy0_control->phy_con12); writel(val, &exynos_phy1_control->phy_con12); /* Start DLL locking */ writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT), &exynos_phy0_control->phy_con12); writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT), &exynos_phy1_control->phy_con12); update_reset_dll(exynos_dmc, DDR_MODE_DDR3); writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), &exynos_dmc->concontrol); /* Memory Channel Inteleaving Size */ writel(mem->iv_size, &exynos_dmc->ivcontrol); /* Set DMC MEMCONTROL register */ val = mem->memcontrol & ~DMC_MEMCONTROL_DSREF_ENABLE; writel(val, &exynos_dmc->memcontrol); writel(mem->memconfig, &exynos_dmc->memconfig0); writel(mem->memconfig, &exynos_dmc->memconfig1); writel(mem->membaseconfig0, &exynos_dmc->membaseconfig0); writel(mem->membaseconfig1, &exynos_dmc->membaseconfig1); /* Precharge Configuration */ writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, &exynos_dmc->prechconfig); /* Power Down mode Configuration */ writel(mem->dpwrdn_cyc << PWRDNCONFIG_DPWRDN_CYC_SHIFT | mem->dsref_cyc << PWRDNCONFIG_DSREF_CYC_SHIFT, &exynos_dmc->pwrdnconfig); /* TimingRow, TimingData, TimingPower and Timingaref * values as per Memory AC parameters */ writel(mem->timing_ref, &exynos_dmc->timingref); writel(mem->timing_row, &exynos_dmc->timingrow); writel(mem->timing_data, &exynos_dmc->timingdata); writel(mem->timing_power, &exynos_dmc->timingpower); /* Send PALL command */ dmc_config_prech(mem, exynos_dmc); if (mem_reset) { /* Send NOP, MRS and ZQINIT commands. * Sending MRS command will reset the DRAM. We should not be * reseting the DRAM after resume, this will lead to memory * corruption as DRAM content is lost after DRAM reset */ dmc_config_mrs(mem, exynos_dmc); } if (mem->gate_leveling_enable) { val = PHY_CON0_RESET_VAL; val |= P0_CMD_EN; writel(val, &exynos_phy0_control->phy_con0); writel(val, &exynos_phy1_control->phy_con0); val = PHY_CON2_RESET_VAL; val |= INIT_DESKEW_EN; writel(val, &exynos_phy0_control->phy_con2); writel(val, &exynos_phy1_control->phy_con2); val = PHY_CON0_RESET_VAL; val |= P0_CMD_EN; val |= BYTE_RDLVL_EN; writel(val, &exynos_phy0_control->phy_con0); writel(val, &exynos_phy1_control->phy_con0); val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | (mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) | (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); writel(val, &exynos_phy0_control->phy_con12); writel(val, &exynos_phy1_control->phy_con12); val = PHY_CON2_RESET_VAL; val |= INIT_DESKEW_EN; val |= RDLVL_GATE_EN; writel(val, &exynos_phy0_control->phy_con2); writel(val, &exynos_phy1_control->phy_con2); val = PHY_CON0_RESET_VAL; val |= P0_CMD_EN; val |= BYTE_RDLVL_EN; val |= CTRL_SHGATE; writel(val, &exynos_phy0_control->phy_con0); writel(val, &exynos_phy1_control->phy_con0); val = PHY_CON1_RESET_VAL; val &= ~(CTRL_GATEDURADJ_MASK); writel(val, &exynos_phy0_control->phy_con1); writel(val, &exynos_phy1_control->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &exynos_dmc->rdlvl_config); i = RDLVL_COMPLETE_TIMEOUT; while ((readl(&exynos_dmc->phystatus) & (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) != (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) { /* * TODO(waihong): Comment on how long this take to * timeout */ udelay(1); i--; } if (!i){ printk(BIOS_EMERG, "Timeout on RDLVL. No DRAM.\n"); return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; } writel(CTRL_RDLVL_GATE_DISABLE, &exynos_dmc->rdlvl_config); writel(0, &exynos_phy0_control->phy_con14); writel(0, &exynos_phy1_control->phy_con14); val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | (mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) | (mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) | (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); writel(val, &exynos_phy0_control->phy_con12); writel(val, &exynos_phy1_control->phy_con12); update_reset_dll(exynos_dmc, DDR_MODE_DDR3); } /* Send PALL command */ dmc_config_prech(mem, exynos_dmc); writel(mem->memcontrol, &exynos_dmc->memcontrol); /* Set DMC Concontrol and enable auto-refresh counter */ writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT) | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT), &exynos_dmc->concontrol); return 0; }