/* * This file is part of the coreboot project. * * Copyright (C) 2005 Nick Barker * Copyright (C) 2009 Jon Harrison #include #include #include "cn400.h" static void dimm_read(unsigned long bank,unsigned long x) { //unsigned long eax; volatile unsigned long y; //eax = x; y = * (volatile unsigned long *) (x+ bank) ; } static void print_val(char *str, int val) { print_debug(str); print_debug_hex8(val); } /** * Configure the bus between the CPU and the northbridge. This might be able to * be moved to post-ram code in the future. For the most part, these registers * should not be messed around with. These are too complex to explain short of * copying the datasheets into the comments, but most of these values are from * the BIOS Porting Guide, so they should work on any board. If they don't, * try the values from your factory BIOS. * * TODO: Changing the DRAM frequency doesn't work (hard lockup). * * @param dev The northbridge's CPU Host Interface (D0F2). */ static void c3_cpu_setup(device_t dev) { /* Host bus interface registers (D0F2 0x50-0x67) */ /* Taken from CN700 and updated from running CN400 */ uint8_t reg8; /* Host Bus I/O Circuit (see datasheet) */ /* Host Address Pullup/down Driving */ pci_write_config8(dev, 0x70, 0x33); pci_write_config8(dev, 0x71, 0x44); pci_write_config8(dev, 0x72, 0x33); pci_write_config8(dev, 0x73, 0x44); /* Output Delay Stagger Control */ pci_write_config8(dev, 0x74, 0x70); /* AGTL+ I/O Circuit */ pci_write_config8(dev, 0x75, 0x08); /* AGTL+ Compensation Status */ pci_write_config8(dev, 0x76, 0x74); /* AGTL+ Auto Compensation Offest */ pci_write_config8(dev, 0x77, 0x00); pci_write_config8(dev, 0x78, 0x94); /* Request phase control */ pci_write_config8(dev, 0x50, 0xA8); /* Line DRDY# Timing Control */ pci_write_config8(dev, 0x60, 0x00); pci_write_config8(dev, 0x61, 0x00); pci_write_config8(dev, 0x62, 0x00); /* QW DRDY# Timing Control */ pci_write_config8(dev, 0x63, 0x00); pci_write_config8(dev, 0x64, 0x00); pci_write_config8(dev, 0x65, 0x00); /* Read Line Burst DRDY# Timing Control */ pci_write_config8(dev, 0x66, 0x00); pci_write_config8(dev, 0x67, 0x00); /* CPU Interface Control */ pci_write_config8(dev, 0x51, 0xFE); pci_write_config8(dev, 0x52, 0xEF); /* Arbitration */ pci_write_config8(dev, 0x53, 0x88); /* Write Policy & Reorder Latecy */ pci_write_config8(dev, 0x56, 0x00); /* Delivery-Trigger Control */ pci_write_config8(dev, 0x58, 0x00); /* IPI Control */ pci_write_config8(dev, 0x59, 0x30); /* CPU Misc Control */ pci_write_config8(dev, 0x5C, 0x00); /* Write Policy */ pci_write_config8(dev, 0x5d, 0xb2); /* Bandwidth Timer */ pci_write_config8(dev, 0x5e, 0x88); /* CPU Miscellaneous Control */ pci_write_config8(dev, 0x5f, 0xc7); /* CPU Miscellaneous Control */ pci_write_config8(dev, 0x55, 0x28); pci_write_config8(dev, 0x57, 0x69); /* CPU Host Bus Final Setup */ reg8 = pci_read_config8(dev, 0x54); reg8 |= 0x08; pci_write_config8(dev, 0x54, reg8); } static void ddr_ram_setup(void) { uint8_t b, c, bank, ma; uint16_t i; unsigned long bank_address; print_debug("CN400 RAM init starting\n"); pci_write_config8(ctrl.d0f7, 0x75, 0x08); /* No Interleaving or Multi Page */ pci_write_config8(ctrl.d0f3, 0x69, 0x00); pci_write_config8(ctrl.d0f3, 0x6b, 0x10); /* DRAM MA Map Type Device 0 Fn3 Offset 50-51 Determine memory addressing based on the module's memory technology and arrangement. See Table 4-9 of Intel's 82443GX datasheet for details. Bank 1/0 MA map type 50[7-5] Bank 1/0 command rate 50[4] Bank 3/2 MA map type 50[3-1] Bank 3/2 command rate 50[0] Read SPD byte 17, Number of banks on SDRAM device. */ c = 0; b = smbus_read_byte(DIMM0, SPD_NUM_BANKS_PER_SDRAM); //print_val("Detecting Memory\nNumber of Banks ",b); // Only supporting 4 bank chips just now if( b == 4 ){ /* Read SPD byte 3, Number of row addresses. */ c = 0x01; bank = 0x40; b = smbus_read_byte(DIMM0, SPD_NUM_ROWS); //print_val("\nNumber of Rows ", b); if( b >= 0x0d ){ // 256/512Mb if (b == 0x0e) bank = 0x48; else bank = 0x44; /* Read SPD byte 13, Primary DRAM width. */ b = smbus_read_byte(DIMM0, SPD_PRIMARY_SDRAM_WIDTH); //print_val("\nPrimary DRAM width", b); if( b != 4 ) // not 64/128Mb (x4) c = 0x81; // 256Mb } /* Read SPD byte 4, Number of column addresses. */ b = smbus_read_byte(DIMM0, SPD_NUM_COLUMNS); //print_val("\nNo Columns ",b); if( b == 10 || b == 11 || b == 12) c |= 0x60; // 10/11 bit col addr if( b == 9 ) c |= 0x40; // 9 bit col addr if( b == 8 ) c |= 0x20; // 8 bit col addr //print_val("\nMA type ", c); pci_write_config8(ctrl.d0f3, 0x50, c); } /* Disable Upper Banks */ pci_write_config8(ctrl.d0f3, 0x51, 0x00); /* else { die("DRAM module size is not supported by CN400\n"); } */ /* DRAM bank size. See 4.3.1 pg 35 5a->5d set to end address for each bank. 1 bit == 32MB 5a = bank 0 5b = bank 0 + b1 5c = bank 0 + b1 + b2 5d = bank 0 + b1 + b2 + b3 */ // Read SPD byte 31 Module bank density //c = 0; b = smbus_read_byte(DIMM0, SPD_DENSITY_OF_EACH_ROW_ON_MODULE); if( b & 0x02 ) { c = 0x40; // 2GB bank |= 0x02; } else if( b & 0x01) { c = 0x20; // 1GB if (bank == 0x48) bank |= 0x01; else bank |= 0x03; } else if( b & 0x80) { c = 0x10; // 512MB if (bank == 0x44) bank |= 0x02; } else if( b & 0x40) { c = 0x08; // 256MB if (bank == 0x44) bank |= 0x01; else bank |= 0x03; } else if( b & 0x20) { c = 0x04; // 128MB if (bank == 0x40) bank |= 0x02; } else if( b & 0x10) { c = 0x02; // 64MB bank |= 0x01; } else if( b & 0x08) c = 0x01; // 32MB else c = 0x01; // Error, use default // set bank zero size pci_write_config8(ctrl.d0f3, 0x40, c); // SPD byte 5 # of physical banks b = smbus_read_byte(DIMM0, SPD_NUM_DIMM_BANKS); //print_val("\nNo Physical Banks ",b); if( b == 2) { c <<=1; bank |= 0x80; } /* else { die("Only a single DIMM is supported by EPIA-N(L)\n"); } */ // set banks 1,2,3... pci_write_config8(ctrl.d0f3, 0x41,c); pci_write_config8(ctrl.d0f3, 0x42,c); pci_write_config8(ctrl.d0f3, 0x43,c); pci_write_config8(ctrl.d0f3, 0x44,c); pci_write_config8(ctrl.d0f3, 0x45,c); pci_write_config8(ctrl.d0f3, 0x46,c); pci_write_config8(ctrl.d0f3, 0x47,c); /* Top Rank Address Mirrored to the South Bridge */ /* over the VLink */ pci_write_config8(ctrl.d0f7, 0x57, (c << 1)); ma = bank; /* Read SPD byte 18 CAS Latency */ b = smbus_read_byte(DIMM0, SPD_ACCEPTABLE_CAS_LATENCIES); /* print_debug("\nCAS Supported "); if(b & 0x04) print_debug("2 "); if(b & 0x08) print_debug("2.5 "); if(b & 0x10) print_debug("3"); c = smbus_read_byte(DIMM0, SPD_MIN_CYCLE_TIME_AT_CAS_MAX); print_val("\nCycle time at CL X (nS)", c); c = smbus_read_byte(DIMM0, SPD_SDRAM_CYCLE_TIME_2ND); print_val("\nCycle time at CL X-0.5 (nS)", c); c = smbus_read_byte(DIMM0, SPD_SDRAM_CYCLE_TIME_3RD); print_val("\nCycle time at CL X-1 (nS)", c); */ /* Scaling of Cycle Time SPD data */ /* 7 4 3 0 */ /* ns x0.1ns */ bank = smbus_read_byte(DIMM0, SPD_MIN_CYCLE_TIME_AT_CAS_MAX); if( b & 0x10 ){ // DDR offering optional CAS 3 //print_debug("\nStarting at CAS 3"); c = 0x30; /* see if we can better it */ if( b & 0x08 ){ // DDR mandatory CAS 2.5 if( smbus_read_byte(DIMM0, SPD_SDRAM_CYCLE_TIME_2ND) <= bank ){ // we can manage max MHz at CAS 2.5 //print_debug("\nWe can do CAS 2.5"); c = 0x20; } } if( b & 0x04 ){ // DDR mandatory CAS 2 if( smbus_read_byte(DIMM0, SPD_SDRAM_CYCLE_TIME_3RD) <= bank ){ // we can manage max MHz at CAS 2 //print_debug("\nWe can do CAS 2"); c = 0x10; } } }else{ // no optional CAS values just 2 & 2.5 //print_debug("\nStarting at CAS 2.5"); c = 0x20; // assume CAS 2.5 if( b & 0x04){ // Should always happen if( smbus_read_byte(DIMM0, SPD_SDRAM_CYCLE_TIME_2ND) <= bank){ // we can manage max MHz at CAS 2 //print_debug("\nWe can do CAS 2"); c = 0x10; } } } /* Scale DRAM Cycle Time to tRP/tRCD */ /* 7 2 1 0 */ /* ns x0.25ns */ if ( bank <= 0x50 ) bank = 0x14; else if (bank <= 0x60) bank = 0x18; else bank = 0x1E; /* DRAM Timing Device 0 Fn 3 Offset 56 RAS Pulse width 56[7,6] CAS Latency 56[5,4] Row pre-charge 56[1,0] SDR DDR 00 1T - 01 2T 2T 10 3T 2.5T 11 - 3T RAS/CAS delay 56[3,2] Determine row pre-charge time (tRP) Read SPD byte 27, min row pre-charge time. */ b = smbus_read_byte(DIMM0, SPD_MIN_ROW_PRECHARGE_TIME); //print_val("\ntRP ",b); if ( b >= (5 * bank)) { c |= 0x03; // set tRP = 5T } else if ( b >= (4 * bank)) { c |= 0x02; // set tRP = 4T } else if ( b >= (3 * bank)) { c |= 0x01; // set tRP = 3T } /* Determine RAS to CAS delay (tRCD) Read SPD byte 29, min row pre-charge time. */ b = smbus_read_byte(DIMM0, SPD_MIN_RAS_TO_CAS_DELAY); //print_val("\ntRCD ",b); if ( b >= (5 * bank)) c |= 0x0C; // set tRCD = 5T else if ( b >= (4 * bank)) c |= 0x08; // set tRCD = 4T else if ( b >= (3 * bank)) c |= 0x04; // set tRCD = 3T /* Determine RAS pulse width (tRAS) Read SPD byte 30, device min active to pre-charge time. */ /* tRAS is in whole ns */ bank = bank >> 2; b = smbus_read_byte(DIMM0, SPD_MIN_ACTIVE_TO_PRECHARGE_DELAY); //print_val("\ntRAS ",b); //print_val("\nBank ", bank); if ( b >= (9 * bank)) c |= 0xC0; // set tRAS = 9T else if ( b >= (8 * bank)) c |= 0x80; // set tRAS = 8T else if ( b >= (7 * bank)) c |= 0x40; // set tRAS = 7T /* Write DRAM Timing All Banks I */ pci_write_config8(ctrl.d0f3, 0x56, c); /* TWrite DRAM Timing All Banks II */ pci_write_config8(ctrl.d0f3, 0x57, 0x1a); /* DRAM arbitration timer */ pci_write_config8(ctrl.d0f3, 0x65, 0x99); /* DRAM Clock Device 0 Fn 3 Offset 68 */ bank = smbus_read_byte(DIMM0, SPD_MIN_CYCLE_TIME_AT_CAS_MAX); /* Setup DRAM Cycle Time */ if ( bank <= 0x50 ) { /* DRAM DDR Control Alert! Alert! See also c3_cpu_setup */ /* This sets to 133MHz FSB / DDR400. */ pci_write_config8(ctrl.d0f3, 0x68, 0x85); } else if (bank <= 0x60) { /* DRAM DDR Control Alert! Alert! This hardwires to */ /* 133MHz FSB / DDR333. See also c3_cpu_setup */ pci_write_config8(ctrl.d0f3, 0x68, 0x81); } else { /* DRAM DDR Control Alert! Alert! This hardwires to */ /* 133MHz FSB / DDR266. See also c3_cpu_setup */ pci_write_config8(ctrl.d0f3, 0x68, 0x80); } /* Delay >= 100ns after DRAM Frequency adjust, See 4.1.1.3 pg 15 */ udelay(200); /* Determine bank interleave Read SPD byte 17, Number of banks on SDRAM device. */ c = 0x0F; b = smbus_read_byte(DIMM0, SPD_NUM_BANKS_PER_SDRAM); if( b == 4) c |= 0x80; else if (b == 2) c |= 0x40; /* 4-Way Interleave With Multi-Paging (From Running System)*/ pci_write_config8(ctrl.d0f3, 0x69, c); /*DRAM Controller Internal Options */ pci_write_config8(ctrl.d0f3, 0x54, 0x01); /* DRAM Arbitration Control */ pci_write_config8(ctrl.d0f3, 0x66, 0x82); /* DRAM Control */ pci_write_config8(ctrl.d0f3, 0x6e, 0x80); /* Disable refresh for now */ pci_write_config8(ctrl.d0f3, 0x6a, 0x00); /* DDR Clock Gen Duty Cycle Control */ pci_write_config8(ctrl.d0f3, 0xEE, 0x01); /* DRAM Clock Control */ pci_write_config8(ctrl.d0f3, 0x6c, 0x00); /* DRAM Bus Turn-Around Setting */ pci_write_config8(ctrl.d0f3, 0x60, 0x01); /* Disable DRAM refresh */ pci_write_config8(ctrl.d0f3,0x6a,0x0); /* Memory Pads Driving and Range Select */ pci_write_config8(ctrl.d0f3, 0xe2, 0xAA); pci_write_config8(ctrl.d0f3, 0xe3, 0x00); pci_write_config8(ctrl.d0f3, 0xe4, 0x99); /* DRAM signal timing control */ pci_write_config8(ctrl.d0f3, 0x74, 0x99); pci_write_config8(ctrl.d0f3, 0x76, 0x09); pci_write_config8(ctrl.d0f3, 0x77, 0x12); pci_write_config8(ctrl.d0f3, 0xe0, 0xAA); pci_write_config8(ctrl.d0f3, 0xe1, 0x00); pci_write_config8(ctrl.d0f3, 0xe6, 0x00); pci_write_config8(ctrl.d0f3, 0xe8, 0xEE); pci_write_config8(ctrl.d0f3, 0xea, 0xEE); /* SPD byte 5 # of physical banks */ b = smbus_read_byte(DIMM0, SPD_NUM_DIMM_BANKS) -1; c = b | 0x40; pci_write_config8(ctrl.d0f3, 0xb0, c); /* Set RAM Decode method */ pci_write_config8(ctrl.d0f3, 0x55, 0x0a); /* Enable DIMM Ranks */ pci_write_config8(ctrl.d0f3, 0x48, ma); udelay(200); c = smbus_read_byte(DIMM0, SPD_SUPPORTED_BURST_LENGTHS); c &= 0x08; if ( c == 0x08 ) { print_debug("Setting Burst Length 8\n"); /* CPU Frequency Device 0 Function 2 Offset 54 CPU FSB Operating Frequency (bits 7:5) 000 : 100MHz 001 : 133MHz 010 : 200MHz 011->111 : Reserved SDRAM BL8 (4) Don't change Frequency from power up defaults This seems to lockup the RAM interface */ c = pci_read_config8(ctrl.d0f2, 0x54); c |= 0x10; pci_write_config8(ctrl.d0f2, 0x54, c); i = 0x008; // Used later to set SDRAM MSR } for( bank = 0 , bank_address=0; bank <= b ; bank++) { /* DDR init described in Via VT8623 BIOS Porting Guide. Pg 28 (4.2.3.1) */ /* NOP command enable */ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_NOP; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); /* read a double word from any address of the dimm */ dimm_read(bank_address,0x1f000); //udelay(200); /* All bank precharge Command Enable */ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_PRECHARGE; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); dimm_read(bank_address,0x1f000); /* MSR Enable Low DIMM*/ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_MSR_LOW; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); /* TODO: Bank Addressing for Different Numbers of Row Addresses */ dimm_read(bank_address,0x2000); udelay(1); dimm_read(bank_address,0x800); udelay(1); /* All banks precharge Command Enable */ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_PRECHARGE; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); dimm_read(bank_address,0x1f200); /* CBR Cycle Enable */ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_CBR; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); /* Read 8 times */ for (c=0;c<8;c++) { dimm_read(bank_address,0x1f300); udelay(100); } /* MSR Enable */ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_MSR_LOW; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); /* Mode Register Definition with adjustement so that address calculation is correct - 64 bit technology, therefore a0-a2 refer to byte within a 64 bit long word, and a3 is the first address line presented to DIMM as a row or column address. MR[9-7] CAS Latency MR[6] Burst Type 0 = sequential, 1 = interleaved MR[5-3] burst length 001 = 2, 010 = 4, 011 = 8, others reserved MR[0-2] dont care CAS Latency 000 reserved 001 reserved 010 2 011 3 100 reserved 101 1.5 110 2.5 111 reserved CAS 2 0101011000 = 0x158 CAS 2.5 1101011000 = 0x358 CAS 3 0111011000 = 0x1d8 */ c = pci_read_config8(ctrl.d0f3, 0x56); if( (c & 0x30) == 0x10 ) dimm_read(bank_address,(0x150 + i)); else if((c & 0x30) == 0x20 ) dimm_read(bank_address,(0x350 + i)); else dimm_read(bank_address,(0x1d0 + i)); /* Normal SDRAM Mode */ c = pci_read_config8(ctrl.d0f3, DRAM_MISC_CTL); c &= 0xf8; /* Clear bits 2-0. */ c |= RAM_COMMAND_NORMAL; pci_write_config8(ctrl.d0f3, DRAM_MISC_CTL, c); bank_address = pci_read_config8(ctrl.d0f3,0x40+bank) * 0x2000000; } // end of for each bank /* Set DRAM DQS Output Control */ pci_write_config8(ctrl.d0f3, 0x79, 0x11); /* Set DQS A/B Input delay to defaults */ pci_write_config8(ctrl.d0f3, 0x7A, 0xA1); pci_write_config8(ctrl.d0f3, 0x7B, 0x62); /* DQS Duty Cycle Control */ pci_write_config8(ctrl.d0f3, 0xED, 0x11); /* SPD byte 5 # of physical banks */ b = smbus_read_byte(DIMM0, SPD_NUM_DIMM_BANKS) -1; /* determine low bond */ if( b == 2) bank_address = pci_read_config8(ctrl.d0f3,0x40) * 0x2000000; else bank_address = 0; for(i = 0x30 ; i < 0x0ff; i++){ pci_write_config8(ctrl.d0f3,0x70,i); // clear *(volatile unsigned long*)(0x4000) = 0; *(volatile unsigned long*)(0x4100+bank_address) = 0; *(volatile unsigned long*)(0x4200) = 0; *(volatile unsigned long*)(0x4300+bank_address) = 0; *(volatile unsigned long*)(0x4400) = 0; *(volatile unsigned long*)(0x4500+bank_address) = 0; // fill *(volatile unsigned long*)(0x4000) = 0x12345678; *(volatile unsigned long*)(0x4100+bank_address) = 0x81234567; *(volatile unsigned long*)(0x4200) = 0x78123456; *(volatile unsigned long*)(0x4300+bank_address) = 0x67812345; *(volatile unsigned long*)(0x4400) = 0x56781234; *(volatile unsigned long*)(0x4500+bank_address) = 0x45678123; // verify if( *(volatile unsigned long*)(0x4000) != 0x12345678) continue; if( *(volatile unsigned long*)(0x4100+bank_address) != 0x81234567) continue; if( *(volatile unsigned long*)(0x4200) != 0x78123456) continue; if( *(volatile unsigned long*)(0x4300+bank_address) != 0x67812345) continue; if( *(volatile unsigned long*)(0x4400) != 0x56781234) continue; if( *(volatile unsigned long*)(0x4500+bank_address) != 0x45678123) continue; // if everything verified then found low bond break; } print_val("\nLow Bond ",i); if( i < 0xff ){ c = i++; for( ; i <0xff ; i++){ pci_write_config8(ctrl.d0f3,0x70, i); // clear *(volatile unsigned long*)(0x8000) = 0; *(volatile unsigned long*)(0x8100+bank_address) = 0; *(volatile unsigned long*)(0x8200) = 0x0; *(volatile unsigned long*)(0x8300+bank_address) = 0; *(volatile unsigned long*)(0x8400) = 0x0; *(volatile unsigned long*)(0x8500+bank_address) = 0; // fill *(volatile unsigned long*)(0x8000) = 0x12345678; *(volatile unsigned long*)(0x8100+bank_address) = 0x81234567; *(volatile unsigned long*)(0x8200) = 0x78123456; *(volatile unsigned long*)(0x8300+bank_address) = 0x67812345; *(volatile unsigned long*)(0x8400) = 0x56781234; *(volatile unsigned long*)(0x8500+bank_address) = 0x45678123; // verify if( *(volatile unsigned long*)(0x8000) != 0x12345678) break; if( *(volatile unsigned long*)(0x8100+bank_address) != 0x81234567) break; if( *(volatile unsigned long*)(0x8200) != 0x78123456) break; if( *(volatile unsigned long*)(0x8300+bank_address) != 0x67812345) break; if( *(volatile unsigned long*)(0x8400) != 0x56781234) break; if( *(volatile unsigned long*)(0x8500+bank_address) != 0x45678123) break; } print_val(" High Bond ",i); c = ((i - c)<<1)/3 + c; print_val(" Setting DQS delay",c); print_debug("\n"); pci_write_config8(ctrl.d0f3,0x70,c); }else{ pci_write_config8(ctrl.d0f3,0x70,0x67); } /* Set DQS ChA Data Output Delay to the default */ pci_write_config8(ctrl.d0f3, 0x71, 0x65); /* Set Ch B DQS Output Delays */ pci_write_config8(ctrl.d0f3, 0x72, 0x2a); pci_write_config8(ctrl.d0f3, 0x73, 0x29); pci_write_config8(ctrl.d0f3, 0x78, 0x03); /* Mystery Value */ pci_write_config8(ctrl.d0f3, 0x67, 0x50); /* Enable Toggle Limiting */ pci_write_config8(ctrl.d0f4, 0xA3, 0x80); /* DRAM refresh rate Device 0 F3 Offset 6a TODO :: Fix for different DRAM technologies other than 512Mb and DRAM Freq Units of 16 DRAM clock cycles - 1. */ //c = pci_read_config8(ctrl.d0f3, 0x68); //c &= 0x07; //b = smbus_read_byte(DIMM0, SPD_REFRESH); //print_val("SPD_REFRESH = ", b); pci_write_config8(ctrl.d0f3,0x6a,0x65); /* SMM and APIC decoding, we do not use SMM */ b = 0x29; pci_write_config8(ctrl.d0f3, 0x86, b); /* SMM and APIC decoding mirror */ pci_write_config8(ctrl.d0f7, 0xe6, b); /* Open Up the Rest of the Shadow RAM */ pci_write_config8(ctrl.d0f3,0x80,0xff); pci_write_config8(ctrl.d0f3,0x81,0xff); /* pci */ pci_write_config8(ctrl.d0f7,0x70,0x82); pci_write_config8(ctrl.d0f7,0x73,0x01); pci_write_config8(ctrl.d0f7,0x76,0x50); pci_write_config8(ctrl.d0f7,0x71,0xc8); /* VGA device. */ pci_write_config16(ctrl.d0f3, 0xa0, (1 << 15)); pci_write_config16(ctrl.d0f3, 0xa4, 0x0010); print_debug("CN400 raminit.c done\n"); }