diff options
Diffstat (limited to 'src')
| -rw-r--r-- | src/cpu/samsung/exynos5420/bootblock.c | 17 | ||||
| -rw-r--r-- | src/cpu/samsung/exynos5420/dmc_init_ddr3.c | 39 | ||||
| -rw-r--r-- | src/cpu/samsung/exynos5420/setup.h | 1 |
3 files changed, 35 insertions, 22 deletions
diff --git a/src/cpu/samsung/exynos5420/bootblock.c b/src/cpu/samsung/exynos5420/bootblock.c index 1ad75ef493..2c42b03ce7 100644 --- a/src/cpu/samsung/exynos5420/bootblock.c +++ b/src/cpu/samsung/exynos5420/bootblock.c @@ -31,23 +31,6 @@ void bootblock_cpu_init(void); void bootblock_cpu_init(void) { - u32 ret; - /* - * During Suspend-Resume & S/W-Reset, as soon as PMU releases - * pad retention, CKE goes high. This causes memory contents - * not to be retained during DRAM initialization. Therfore, - * there is a new control register(0x100431e8[28]) which lets us - * release pad retention and retain the memory content until the - * initialization is complete. - */ - if (read32(((void *)INF_REG_BASE + INF_REG1_OFFSET)) == S5P_CHECK_SLEEP) { - write32(PAD_RETENTION_DRAM_COREBLK_VAL, - (void *)PAD_RETENTION_DRAM_COREBLK_OPTION); - do { - ret = read32((void *)PAD_RETENTION_DRAM_STATUS); - } while (ret != 0x1); - } - /* kick off the multi-core timer. * We want to do this as early as we can. */ diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c index 6c431f374f..0a4edc848b 100644 --- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c +++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c @@ -184,14 +184,43 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) writel(mem->timing_power, &drex0->timingpower); writel(mem->timing_power, &drex1->timingpower); - /* Send NOP, MRS and ZQINIT commands. - * Sending MRS command will reset the DRAM. We should not be - * reseting the DRAM after resume, this will lead to memory - * corruption as DRAM content is lost after DRAM reset. - */ if (reset) { + /* Send NOP, MRS and ZQINIT commands. + * Sending MRS command will reset the DRAM. We should not be + * reseting the DRAM after resume, this will lead to memory + * corruption as DRAM content is lost after DRAM reset. + */ dmc_config_mrs(mem, drex0); dmc_config_mrs(mem, drex1); + } else { + u32 ret; + + /* + * During Suspend-Resume & S/W-Reset, as soon as PMU releases + * pad retention, CKE goes high. This causes memory contents + * not to be retained during DRAM initialization. Therfore, + * there is a new control register(0x100431e8[28]) which lets us + * release pad retention and retain the memory content until the + * initialization is complete. + */ + write32(PAD_RETENTION_DRAM_COREBLK_VAL, + (void *)PAD_RETENTION_DRAM_COREBLK_OPTION); + do { + ret = read32((void *)PAD_RETENTION_DRAM_STATUS); + } while (ret != 0x1); + + /* + * CKE PAD retention disables DRAM self-refresh mode. + * Send auto refresh command for DRAM refresh. + */ + for (i = 0; i < 128; i++) { + writel(DIRECT_CMD_REFA, &drex0->directcmd); + writel(DIRECT_CMD_REFA | (0x1 << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(DIRECT_CMD_REFA, &drex1->directcmd); + writel(DIRECT_CMD_REFA | (0x1 << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } } if (mem->gate_leveling_enable) { diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h index ca7281dd82..9dc49d8d10 100644 --- a/src/cpu/samsung/exynos5420/setup.h +++ b/src/cpu/samsung/exynos5420/setup.h @@ -715,6 +715,7 @@ struct exynos5_phy_control; #define DIRECT_CMD_ZQINIT 0x0a000000 #define DIRECT_CMD_CHANNEL_SHIFT 28 #define DIRECT_CMD_CHIP_SHIFT 20 +#define DIRECT_CMD_BANK_SHIFT 16 #define DIRECT_CMD_REFA (5 << 24) #define DIRECT_CMD_MRS1 0x71C00 #define DIRECT_CMD_MRS2 0x10BFC |